BUK9504-40A,127 NXP Semiconductors, BUK9504-40A,127 Datasheet - Page 6

• Manufacturer Part Number: BUK9504-40A,127
• Description: MOSFET N-CH 40V 75A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9504-40A,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 128nC @ 5V
• Input Capacitance (ciss) @ Vds: 8260pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.004 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 198 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056692127; BUK9504-40A; BUK9504-40A

Philips Semiconductors
Table 5:
T
9397 750 08649
Product data
Symbol
Source-drain diode
V
t
Q
rr
j
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
SD
r
= 25 C unless otherwise specified
T
T
j
j
= 25 C; t
= 25 C
R DSon
I D
function of drain-source voltage; typical values.
of drain current; typical values.
(m )
(A)
10
400
350
300
250
200
150
100
8
6
4
2
0
Characteristics
Parameter
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
50
0
0
0
p
10
= 300 s
8
V GS = 3 V
100
2
7
6
V GS = 5 V
3.2
…continued
4
200
3.4
3.6
6
3.8
300
4
I D (A)
8
Conditions
I
Figure 15
I
V
V DS (V)
S
S
GS
10
5
= 40 A; V
= 20 A; dI
400
= 10 V; V
Rev. 01 — 24 October 2001
10
3
2.2
4
GS
S
/dt = 100 A/ s
= 0 V;
DS
= 30 V
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
T
a
j
R DSon
= 25 C; I
=
(m )
of gate-source voltage; typical values.
factor as a function of junction temperature.
1.6
1.2
0.8
0.4
a
5
4
3
2
2
0
---------------------------- -
R
-60
3
DSon 25 C
R
BUK95/96/9E04-40A
DSon
D
Min
-
-
-
= 25 A
6
0
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Typ
0.85
260
531
60
9
120
12
V GS (V)
T j (
Max
1.2
-
-
o
03aa27
C)
180
15
Unit
V
ns
nC
6 of 15