BUK9504-40A,127 NXP Semiconductors, BUK9504-40A,127 Datasheet - Page 4

• Manufacturer Part Number: BUK9504-40A,127
• Description: MOSFET N-CH 40V 75A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9504-40A,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 128nC @ 5V
• Input Capacitance (ciss) @ Vds: 8260pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.004 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 198 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056692127; BUK9504-40A; BUK9504-40A

Philips Semiconductors
7. Thermal characteristics
Table 4:
9397 750 08649
Product data
Symbol
R
R
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
th(j-a)
th(j-mb)
Z th(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to ambient
thermal resistance from junction to mounting
base
(K/W)
10 -1
10 -2
10 -3
1
10 -6
0.1
0.05
0.2
0.02
= 0.5
Single Shot
7.1 Transient thermal impedance
10 -5
10 -4
Rev. 01 — 24 October 2001
Conditions
vertical in still air; SOT78 and
SOT226 packages
mounted on printed circuit board;
minimum footprint; SOT404
package
Figure 4
10 -3
10 -2
BUK95/96/9E04-40A
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
10 -1
P
t p
T
t p (s)
=
Value
60
50
0.5
t p
T
t
1
Unit
K/W
K/W
K/W
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