BUK9504-40A,127 NXP Semiconductors, BUK9504-40A,127 Datasheet

MOSFET N-CH 40V 75A SOT78

BUK9504-40A,127

Manufacturer Part Number
BUK9504-40A,127
Description
MOSFET N-CH 40V 75A SOT78
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK9E04-40A127.pdf (15 pages)

Specifications of BUK9504-40A,127

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
128nC @ 5V
Input Capacitance (ciss) @ Vds
8260pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220AB-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.004 Ohms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
198 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934056692127
BUK9504-40A
BUK9504-40A
1. Description
2. Features
3. Applications
4. Pinning information
Table 1:
[1]
Pin
1
2
3
mb
It is not possible to make connection to pin 2 of the SOT404 package.
Description
gate (g)
drain (d)
source (s)
mounting base,
connected to
drain (d)
Pinning - SOT78, SOT404, SOT226 simplified outline and symbol
[1]
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology, featuring very low on-state resistance.
Product availability:
BUK9504-40A in SOT78 (TO-220AB); BUK9604-40A in SOT404 (D 2-PAK);
BUK9E04-40A in SOT226 (I
BUK95/96/9E04-40A
TrenchMOS™ logic level FET
Rev. 01 — 24 October 2001
TrenchMOS™ technology
Q101 compliant
175 C rated
Logic level compatible.
Automotive and general purpose power switching:
Simplified outline
SOT78 (TO-220AB)
12 V loads
Motors, lamps and solenoids.
1 2
mb
3
MBK106
SOT404 (D
1
2
-PAK).
mb
2
2
-PAK)
3
MBK116
SOT226 (I
1 2 3
mb
2
-PAK)
MBK112
Symbol
MBB076
Product data
g
d
s

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BUK9504-40A,127 Summary of contents

Page 1

... Rev. 01 — 24 October 2001 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9504-40A in SOT78 (TO-220AB); BUK9604-40A in SOT404 (D 2-PAK); BUK9E04-40A in SOT226 (I 2. Features TrenchMOS™ technology Q101 compliant 175 C rated Logic level compatible ...

Page 2

Philips Semiconductors 5. Quick reference data Table 2: Quick reference data Symbol Parameter V drain-source voltage (DC drain current (DC total power dissipation tot T junction temperature j R drain-source on-state resistance DSon 6. Limiting values ...

Page 3

Philips Semiconductors 120 P der (%) 100 100 125 P tot P = ---------------------- - 100% der P tot 25 C Fig 1. Normalized total power dissipation as a function of ...

Page 4

Philips Semiconductors 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter R thermal resistance from junction to ambient th(j-a) R thermal resistance from junction to mounting th(j-mb) base 7.1 Transient thermal impedance 1 Z th(j-mb) (K/ ...

Page 5

Philips Semiconductors 8. Characteristics Table 5: Characteristics unless otherwise specified j Symbol Parameter Static characteristics V drain-source breakdown (BR)DSS voltage V gate-source threshold voltage I GS(th) I drain-source leakage current DSS I gate-source leakage current GSS ...

Page 6

Philips Semiconductors Table 5: Characteristics …continued unless otherwise specified j Symbol Parameter Source-drain diode V source-drain (diode forward) SD voltage t reverse recovery time rr Q recovered charge 400 I ...

Page 7

Philips Semiconductors 2.5 V GS(th) (V) max 2 typ 1.5 min 1 0 Fig 9. Gate-source threshold voltage as a function of junction temperature. 100 g ...

Page 8

Philips Semiconductors 100 175 º Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values ...

Page 9

Philips Semiconductors 9. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB ( DIMENSIONS (mm are the original dimensions UNIT A 1 4.5 1.39 0.9 1.3 mm ...

Page 10

Philips Semiconductors Plastic single-ended surface mounted package (Philips version of D (one lead cropped DIMENSIONS (mm are the original dimensions UNIT c 4.50 1.40 0.85 0.64 mm 4.10 1.27 0.60 0.46 ...

Page 11

Philips Semiconductors Plastic single-ended package; low-profile 3 lead TO-220AB DIMENSIONS (mm are the original dimensions) UNIT 4.5 1.40 0.9 1.3 mm 4.1 1.27 0.7 1.0 Note 1. Terminals ...

Page 12

Philips Semiconductors 10. Soldering handbook, full pagewidth 8.35 8.15 4.85 7.95 Dimensions in mm. Fig 19. Reflow soldering footprint for SOT404. 9397 750 08649 Product data 10.85 10.60 10.50 1.50 7.50 7.40 2.15 2.25 1.50 4.60 0.30 3.00 solder lands ...

Page 13

Philips Semiconductors 11. Revision history Table 6: Revision history Rev Date CPCN Description 01 20011024 - Product Specification; initial version 9397 750 08649 Product data BUK95/96/9E04-40A Rev. 01 — 24 October 2001 TrenchMOS™ logic level FET © Koninklijke Philips Electronics ...

Page 14

Philips Semiconductors 12. Data sheet status [1] [2] Data sheet status Product status Objective data Development Preliminary data Qualification Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product ...

Page 15

Philips Semiconductors Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . ...

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