PMZ250UN,315 NXP Semiconductors, PMZ250UN,315 Datasheet - Page 9

• Manufacturer Part Number: PMZ250UN,315
• Description: MOSFET N-CH 20V 2.28A SOT883
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMZ250UN,315

• Package / Case: SC-101, SOT-883
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 200mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.28A
• Vgs(th) (max) @ Id: 950mV @ 250µA
• Gate Charge (qg) @ Vgs: 0.89nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 45pF @ 20V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.3 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 2.28 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060157315; PMZ250UN T/R; PMZ250UN T/R

NXP Semiconductors
7. Package outline
Fig 15. Package outline SOT833 (SC-101)
PMZ250UN_1
Product data sheet
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm
DIMENSIONS (mm are the original dimensions)
Note
1. Including plating thickness
UNIT
mm
VERSION
OUTLINE
SOT883
A
0.50
0.46
(1)
max.
0.03
A
e
1
b
0.20
0.12
2
1
b
IEC
0.55
0.47
b
1
L
0.62
0.55
D
1.02
0.95
E
JEDEC
e 1
E
0.35
e
REFERENCES
Rev. 01 — 21 February 2008
0.65
e
1
L 1
0.30
0.22
SC-101
L
JEITA
3
0.30
0.22
L
A 1
D
1
b 1
N-channel TrenchMOS extremely low level FET
A
0
PROJECTION
EUROPEAN
scale
0.5
PMZ250UN
© NXP B.V. 2008. All rights reserved.
ISSUE DATE
03-02-05
03-04-03
1 mm
SOT883
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