PMZ250UN NXP Semiconductors, PMZ250UN Datasheet
PMZ250UN
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PMZ250UN Summary of contents
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... PMZ250UN N-channel TrenchMOS extremely low level FET Rev. 01 — 21 February 2008 BOTTOM VIEW 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. 1.2 Features I Profi lower than SOT23 I Lower on-state resistance I Leadless package 1 ...
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... pulsed see see Figure pulsed human body model 100pF 1.5 k machine model 200 pF Rev. 01 — 21 February 2008 PMZ250UN Min - - - Figure 2 and 3 - Figure 2 - Figure © NXP B.V. 2008. All rights reserved. Version ...
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... der Fig 2. Normalized continuous drain current as a function of solder point temperature Limit DSon Rev. 01 — 21 February 2008 PMZ250UN 003aac033 50 100 150 ------------------- - 100 % 003aac202 100 100 ms ...
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... Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration PMZ250UN_1 Product data sheet N-channel TrenchMOS extremely low level FET Conditions see Figure 4 minimum footprint - Rev. 01 — 21 February 2008 PMZ250UN Min Typ Max Unit - - 50 K/W [1] - 670 - K/W 003aab831 ...
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... 4.5 V; see Figure 11 and MHz; see GS DS Figure 4 0 see Figure Rev. 01 — 21 February 2008 PMZ250UN Min Typ Max and 10 0.45 0.7 0. 100 - 10 100 and ...
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... V (V) DS Fig 6. Drain-source on-state resistance as a function 03an04 T = 150 (V) GS > DSon Fig 8. Normalized drain-source on-state resistance Rev. 01 — 21 February 2008 PMZ250UN N-channel TrenchMOS extremely low level FET 1 V ( 0.8 0.6 0.4 0 0 drain current; typical values 2 ...
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... Fig 10. Sub-threshold drain current as a function of 03an07 0.6 0 (nC) G Fig 12. Gate charge waveform definitions Rev. 01 — 21 February 2008 PMZ250UN N-channel TrenchMOS extremely low level FET ( min typ 0.4 0 ...
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... Product data sheet 03an97 (pF 0 Fig 14. Input, output and reverse transfer capacitances Rev. 01 — 21 February 2008 PMZ250UN N-channel TrenchMOS extremely low level FET MHz function of drain-source voltage; typical values ...
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... Product data sheet 0.62 1.02 0.30 0.30 0.35 0.65 0.55 0.95 0.22 0.22 REFERENCES JEDEC JEITA SC-101 Rev. 01 — 21 February 2008 PMZ250UN N-channel TrenchMOS extremely low level FET A 0 0.5 scale EUROPEAN PROJECTION SOT883 1 mm ISSUE DATE 03-02-05 03-04-03 © NXP B.V. 2008. All rights reserved ...
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... Dimensions in mm Fig 16. Reflow soldering footprint for SOT883 PMZ250UN_1 Product data sheet 1.30 0. 0.05 (12 ) 0.60 0.70 0.80 0.30 0. 0.40 0. 0.50 mbl873 0. Rev. 01 — 21 February 2008 PMZ250UN N-channel TrenchMOS extremely low level FET solder lands solder resist occupied area solder paste © NXP B.V. 2008. All rights reserved ...
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... Revision history Table 6. Revision history Document ID Release date PMZ250UN_1 20080221 PMZ250UN_1 Product data sheet N-channel TrenchMOS extremely low level FET Data sheet status Change notice Product data sheet - Rev. 01 — 21 February 2008 PMZ250UN Supersedes - © NXP B.V. 2008. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 21 February 2008 PMZ250UN © NXP B.V. 2008. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PMZ250UN All rights reserved. Date of release: 21 February 2008 Document identifier: PMZ250UN_1 ...