PMZ250UN,315 NXP Semiconductors, PMZ250UN,315 Datasheet - Page 2

• Manufacturer Part Number: PMZ250UN,315
• Description: MOSFET N-CH 20V 2.28A SOT883
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMZ250UN,315

• Package / Case: SC-101, SOT-883
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 200mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.28A
• Vgs(th) (max) @ Id: 950mV @ 250µA
• Gate Charge (qg) @ Vgs: 0.89nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 45pF @ 20V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.3 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 2.28 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060157315; PMZ250UN T/R; PMZ250UN T/R

NXP Semiconductors
3. Ordering information
Table 2.
4. Limiting values
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PMZ250UN_1
Product data sheet
Type number
PMZ250UN
CAUTION
Symbol Parameter
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Electrostatic discharge
V
D
DM
S
SM
stg
j
DS
DGR
GS
tot
esd
drain-source voltage
drain-gate voltage (DC)
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
electrostatic discharge voltage all pins
Ordering information
Limiting values
Package
Name
SC-101
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20 , IEC/ST 61340-5 , JESD625-A or
equivalent standards.
Description
leadless ultra small plastic package; 3 solder lands;
body 1.0
Conditions
25 C
25 C
T
T
T
T
-
-
T
T
human body model; C = 100pF; R = 1.5 k
machine model; C = 200 pF
sp
sp
sp
sp
sp
sp
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C; see
= 25 C
= 25 C; pulsed; t
0.6
Rev. 01 — 21 February 2008
T
T
0.5 mm
j
j
150 C
150 C; R
GS
GS
Figure 1
= 4.5 V; see
= 4.5 V; see
p
p
GS
10 s; see
10 s
= 20 k
N-channel TrenchMOS extremely low level FET
Figure 2
Figure 2
Figure 3
and
3
PMZ250UN
Min
-
-
-
-
-
-
-
-
-
-
-
-
55
55
© NXP B.V. 2008. All rights reserved.
Max
20
20
2.28
1.44
4.56
2.50
+150
+150
2.28
4.56
60
30
8
Version
SOT883
2 of 13
Unit
V
V
V
A
A
A
W
A
A
V
V
C
C