PMZ250UN,315 NXP Semiconductors, PMZ250UN,315 Datasheet - Page 3

• Manufacturer Part Number: PMZ250UN,315
• Description: MOSFET N-CH 20V 2.28A SOT883
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMZ250UN,315

• Package / Case: SC-101, SOT-883
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 200mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.28A
• Vgs(th) (max) @ Id: 950mV @ 250µA
• Gate Charge (qg) @ Vgs: 0.89nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 45pF @ 20V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.3 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 2.28 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060157315; PMZ250UN T/R; PMZ250UN T/R

NXP Semiconductors
PMZ250UN_1
Product data sheet
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
P
(%)
(A)
I
10
10
der
D
120
10
10
80
40
0
1
2
1
2
10
function of solder point temperature
T
P
0
sp
der
1
= 25 C; I
=
----------------------- -
P
tot 25 C
50
P
DM
tot
is single pulse
100 %
100
150
T
003aac031
sp
1
( C)
Rev. 01 — 21 February 2008
Limit R
200
DSon
= V
DS
Fig 2. Normalized continuous drain current as a
/ I
D
( %)
I
der
N-channel TrenchMOS extremely low level FET
120
DC
80
40
0
function of solder point temperature
I
0
der
=
10
------------------- -
I
D 25 C
I
50
D
100 %
100 s
1 ms
10 ms
100 ms
t
p
100
= 10 s
V
DS
(V)
PMZ250UN
150
© NXP B.V. 2008. All rights reserved.
T
003aac033
sp
003aac202
( C)
200
10
2
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