PMZ250UN,315 NXP Semiconductors, PMZ250UN,315 Datasheet - Page 6

• Manufacturer Part Number: PMZ250UN,315
• Description: MOSFET N-CH 20V 2.28A SOT883
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMZ250UN,315

• Package / Case: SC-101, SOT-883
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 200mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.28A
• Vgs(th) (max) @ Id: 950mV @ 250µA
• Gate Charge (qg) @ Vgs: 0.89nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 45pF @ 20V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.3 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 2.28 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060157315; PMZ250UN T/R; PMZ250UN T/R

NXP Semiconductors
PMZ250UN_1
Product data sheet
Fig 5. Output characteristics: drain current as a
Fig 7. Transfer characteristics: drain current as a
(A)
(A)
I
I
D
D
2.5
1.5
0.5
2.5
1.5
0.5
2
1
0
2
1
0
T
function of drain-source voltage; typical values
T
function of gate-source voltage; typical values
0
0
j
j
= 25 C
= 25 C and 150 C; V
0.5
1
4.5
25 C
3
1
2
DS
2.5
> I
D
T
j
= 150 C
V
R
1.5
3
GS
DSon
V
V
(V) = 1.5
DS
GS
03an02
03an04
(V)
(V)
1.8
2
Rev. 01 — 21 February 2008
2
4
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
R
DSon
( )
a
N-channel TrenchMOS extremely low level FET
0.8
0.6
0.4
0.2
2.0
1.5
1.0
0.5
1
0
0
T
of drain current; typical values
factor as a function of junction temperature
a
0
60
j
= 25 C
=
----------------------------- -
R
DSon 25 C
R
0.5
DSon
V
0
GS
(V) = 1.8
1
60
1.5
2
PMZ250UN
120
© NXP B.V. 2008. All rights reserved.
2
003aac024
T
j
I
D
( C)
03an03
(A)
2.5
4.5
3
180
2.5
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