PMZ250UN,315 NXP Semiconductors, PMZ250UN,315 Datasheet - Page 5

• Manufacturer Part Number: PMZ250UN,315
• Description: MOSFET N-CH 20V 2.28A SOT883
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMZ250UN,315

• Package / Case: SC-101, SOT-883
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 200mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.28A
• Vgs(th) (max) @ Id: 950mV @ 250µA
• Gate Charge (qg) @ Vgs: 0.89nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 45pF @ 20V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.3 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 2.28 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060157315; PMZ250UN T/R; PMZ250UN T/R

NXP Semiconductors
6. Characteristics
Table 5.
T
PMZ250UN_1
Product data sheet
Symbol Parameter
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
DSS
GSS
d(on)
r
d(off)
f
j
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
G(tot)
GS
GD
= 25 C unless otherwise specified.
drain-source breakdown
voltage
gate-source threshold voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
Characteristics
Conditions
I
I
V
V
V
V
V
I
Figure 11
V
Figure 14
V
I
D
D
D
S
DS
GS
GS
GS
GS
GS
DS
T
T
T
T
T
T
T
T
T
= 0.3 A; V
= 10 A; V
= 0.25 mA; V
= 1 A; V
j
j
j
j
j
j
j
j
j
= 20 V; V
= 10 V; R
= 8 V; V
= 4.5 V; I
= 2.5 V; I
= 1.8 V; I
= 0 V; V
= 25 C
= 55 C
= 25 C
= 150 C
= 55 C
= 25 C
= 150 C
= 25 C
= 150 C
Rev. 01 — 21 February 2008
and
DS
GS
DS
GS
D
D
D
= 10 V; V
GS
DS
L
12
= 0.2 A; see
= 0.1 A; see
= 0.075 A; see
= 10 ; V
= 0 V; see
DS
= 20 V; f = 1 MHz; see
= 0 V
= 0 V
= 0 V
= V
GS
GS
; see
N-channel TrenchMOS extremely low level FET
GS
= 4.5 V; see
Figure 13
= 4.5 V; R
Figure 6
Figure 6
Figure 9
Figure 6
and
and
G
and
and
= 6
8
8
10
8
Min
20
18
0.45
0.25
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PMZ250UN
Typ
-
-
0.7
-
-
-
-
10
250
400
320
420
0.89
0.13
0.18
45
11
7
4.5
10
18.5
5
0.80
© NXP B.V. 2008. All rights reserved.
Max
-
-
0.95
-
1.15
1
100
100
300
480
400
600
-
-
-
-
-
-
-
-
-
-
1.2
5 of 13
Unit
V
V
V
V
V
nA
m
m
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
A
A