PMZ250UN,315 NXP Semiconductors, PMZ250UN,315 Datasheet
PMZ250UN,315
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PMZ250UN T/R
PMZ250UN T/R
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PMZ250UN,315 Summary of contents
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PMZ250UN N-channel TrenchMOS extremely low level FET Rev. 01 — 21 February 2008 BOTTOM VIEW 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. 1.2 Features I Profi ...
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... NXP Semiconductors 3. Ordering information Table 2. Ordering information Type number Package Name PMZ250UN SC-101 4. Limiting values CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20 , IEC/ST 61340-5 , JESD625-A or equivalent standards. ...
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... NXP Semiconductors 120 P der (%) 100 P tot P = ----------------------- - 100 % der P tot 25 C Fig 1. Normalized total power dissipation as a function of solder point temperature ( single pulse sp DM Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PMZ250UN_1 Product data sheet N-channel TrenchMOS extremely low level FET ...
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... NXP Semiconductors 5. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter R thermal resistance from junction to solder point th(j-sp) R thermal resistance from junction to ambient th(j-a) [1] Mounted on a printed-circuit board; vertical in still air th(j-sp) (K/W) = 0.5 0.2 10 0.1 0.05 0.02 single pulse Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration ...
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... NXP Semiconductors 6. Characteristics Table 5. Characteristics unless otherwise specified. j Symbol Parameter Static characteristics V drain-source breakdown (BR)DSS voltage V gate-source threshold voltage GS(th) I drain leakage current DSS I gate leakage current GSS R drain-source on-state DSon resistance Dynamic characteristics Q total gate charge G(tot) Q gate-source charge ...
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... NXP Semiconductors 2.5 4 (A) 2 1 Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values 2 ( 1 and 150 Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values PMZ250UN_1 Product data sheet 03an02 R DSon ( ) 2 1 ...
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... NXP Semiconductors 1.2 V GS(th) (V) 0.9 0.6 0 0.25 mA Fig 9. Gate-source threshold voltage as a function of junction temperature ( 0.2 0 Fig 11. Gate-source voltage as a function of gate charge; typical values PMZ250UN_1 Product data sheet 03aj65 max typ min 120 180 Fig 10. Sub-threshold drain current as a function of 03an07 0 ...
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... NXP Semiconductors (A) 0.8 0.6 0.4 0.2 150 0.2 0 and 150 Fig 13. Source current as a function of source-drain voltage; typical values PMZ250UN_1 Product data sheet 03an97 (pF 0 Fig 14. Input, output and reverse transfer capacitances Rev. 01 — 21 February 2008 PMZ250UN N-channel TrenchMOS extremely low level FET ...
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... NXP Semiconductors 7. Package outline Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0 DIMENSIONS (mm are the original dimensions) A (1) 1 UNIT max. 0.50 0.20 0.55 mm 0.03 0.46 0.12 0.47 Note 1. Including plating thickness OUTLINE VERSION IEC SOT883 Fig 15. Package outline SOT833 (SC-101) ...
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... NXP Semiconductors 8. Soldering R = 0.05 ( 0.90 0.20 0. Dimensions in mm Fig 16. Reflow soldering footprint for SOT883 PMZ250UN_1 Product data sheet 1.30 0. 0.05 (12 ) 0.60 0.70 0.80 0.30 0. 0.40 0. 0.50 mbl873 0. Rev. 01 — 21 February 2008 PMZ250UN N-channel TrenchMOS extremely low level FET solder lands ...
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... NXP Semiconductors 9. Revision history Table 6. Revision history Document ID Release date PMZ250UN_1 20080221 PMZ250UN_1 Product data sheet N-channel TrenchMOS extremely low level FET Data sheet status Change notice Product data sheet - Rev. 01 — 21 February 2008 PMZ250UN Supersedes - © NXP B.V. 2008. All rights reserved. ...
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... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
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... NXP Semiconductors 12. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 8 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 10 Legal information 10.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 10.2 Defi ...