PMZ250UN,315 NXP Semiconductors, PMZ250UN,315 Datasheet - Page 7

• Manufacturer Part Number: PMZ250UN,315
• Description: MOSFET N-CH 20V 2.28A SOT883
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMZ250UN,315

• Package / Case: SC-101, SOT-883
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 200mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.28A
• Vgs(th) (max) @ Id: 950mV @ 250µA
• Gate Charge (qg) @ Vgs: 0.89nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 45pF @ 20V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.3 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 2.28 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060157315; PMZ250UN T/R; PMZ250UN T/R

NXP Semiconductors
PMZ250UN_1
Product data sheet
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Gate-source voltage as a function of gate
V
GS(th)
V
(V)
(V)
GS
1.2
0.9
0.6
0.3
0
5
4
3
2
1
0
I
junction temperature
I
charge; typical values
D
D
60
0
= 0.25 mA; V
= 1 A; V
I
T
V
D
j
DS
= 25 C
= 1 A
= 10 V
0.2
DS
0
= 10 V
DS
0.4
= V
GS
60
0.6
max
min
typ
120
0.8
T
Q
j
G
( C)
03an07
03aj65
(nC)
Rev. 01 — 21 February 2008
180
1
Fig 10. Sub-threshold drain current as a function of
Fig 12. Gate charge waveform definitions
(A)
I
10
10
10
10
N-channel TrenchMOS extremely low level FET
D
3
4
5
6
T
gate-source voltage
0
j
V
= 25 C; V
V
V
V
GS(pl)
DS
GS(th)
GS
Q
DS
GS1
0.4
= 5 V
I
Q
D
GS
min
Q
GS2
Q
G(tot)
typ
Q
PMZ250UN
GD
0.8
V
© NXP B.V. 2008. All rights reserved.
GS
max
003aaa508
(V)
03am43
1.2
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