FQA160N08 Fairchild Semiconductor, FQA160N08 Datasheet - Page 4

• Manufacturer Part Number: FQA160N08
• Description: MOSFET N-CH 80V 160A TO-3P
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQA160N08

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 290nC @ 10V
• Input Capacitance (ciss) @ Vds: 7900pF @ 25V
• Power - Max: 375W
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.007 Ohms
• Forward Transconductance Gfs (max / Min): 92 S
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 160 A
• Power Dissipation: 375 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2000 Fairchild Semiconductor International
Typical Characteristics
10
1.2
1.1
1.0
0.9
0.8
10
10
10
10
Figure 9. Maximum Safe Operating Area
-100
-1
3
2
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
T
V
vs. Temperature
J
DS
, Junction Temperature [
Operation in This Area
is Limited by R
, Drain-Source Voltage [V]
0
1 0
1 0
※ Notes :
1. T
2. T
3. Single Pulse
-1
-2
1 0
DC
C
J
10
= 175
= 25
-5
1
D = 0 .5
0 .0 2
0 .0 5
0 .0 1
DS(on)
50
10 ms
o
0 .1
0 .2
C
o
C
1 ms
Figure 11. Transient Thermal Response Curve
100
1 0
(Continued)
100 s
o
-4
C]
s in g le p u ls e
※ Notes :
1. V
2. I
t
1
D
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
10 s
GS
= 250 μ A
150
= 0 V
10
2
1 0
-3
200
1 0
-2
180
150
120
3.0
2.5
2.0
1.5
1.0
0.5
0.0
90
60
30
0
-100
25
※ N o t e s :
Figure 8. On-Resistance Variation
1 0
Figure 10. Maximum Drain Current
1 . Z
2 . D u ty F a c to r , D = t
3 . T
-1
P
θ J C
J M
-50
DM
50
Limited by Package
- T
( t) = 0 .4 ℃ /W M a x .
C
vs. Case Temperature
= P
T
vs. Temperature
J
T
t
D M
, Junction Temperature [
1
C
75
t
1 0
0
, Case Temperature [℃]
2
* Z
0
1
/t
θ J C
2
( t)
100
50
1 0
1
125
100
o
C]
※ Notes :
1. V
2. I
150
150
D
GS
= 80 A
= 10 V
Rev. A, September 2000
200
175