FQA160N08 Fairchild Semiconductor, FQA160N08 Datasheet

MOSFET N-CH 80V 160A TO-3P

FQA160N08

Manufacturer Part Number
FQA160N08
Description
MOSFET N-CH 80V 160A TO-3P
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQA160N08

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
80V
Current - Continuous Drain (id) @ 25° C
160A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
290nC @ 10V
Input Capacitance (ciss) @ Vds
7900pF @ 25V
Power - Max
375W
Mounting Type
Through Hole
Package / Case
TO-3PN-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.007 Ohms
Forward Transconductance Gfs (max / Min)
92 S
Drain-source Breakdown Voltage
80 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
160 A
Power Dissipation
375 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

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Price
Part Number:
FQA160N08
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
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Manufacturer:
FSC
Quantity:
86 755
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©2000 Fairchild Semiconductor International
FQA160N08
80V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, high
efficiency switching for DC/DC converters, and DC motor
control.
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
DSS
GSS
AS
AR
D
Symbol
Symbol
, T
JC
CS
JA
STG
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
G
D
S
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
Parameter
= 25°C)
Parameter
T
C
FQA Series
C
C
= 25°C unless otherwise noted
TO-3PN
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 160A, 80V, R
• Low gate charge ( typical 220 nC)
• Low Crss ( typical 530 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175 C maximum junction temperature rating
G
!
!
DS(on)
0.24
Typ
--
--
! "
! "
FQA160N08
-55 to +175
= 0.007 @V
!
!
!
!
S
D
"
"
"
"
"
"
1600
37.5
160
640
160
375
300
113
2.5
6.5
80
25
Max
0.4
40
--
GS
QFET
QFET
QFET
QFET
September 2000
= 10 V
Rev. A, September 2000
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

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FQA160N08 Summary of contents

Page 1

... C Parameter September 2000 QFET QFET QFET QFET = 0.007 @ DS(on " " ! " ! " " " " " FQA160N08 Units 80 160 113 640 25 1600 mJ 160 37.5 mJ 6.5 V/ns 375 2.5 W/°C -55 to +175 °C 300 Typ Max Units -- 0.4 °C/W 0.24 -- °C/W ...

Page 2

... V ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature 6. Continuous Drain Current Calculated by Maximum Junction Temperature : Limited by Package ©2000 Fairchild Semiconductor International T = 25°C unless otherwise noted C Test Conditions 250 A GS ...

Page 3

... Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 20000 18000 16000 14000 12000 10000 8000 6000 4000 2000 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2000 Fairchild Semiconductor International 2 10 175℃ ※ Notes : 25℃ 1. 250μ s Pulse Test 25℃ Figure 2. Transfer Characteristics 2 ...

Page 4

... T = 175 Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2000 Fairchild Semiconductor International (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 0.5 = 250 μ 0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation 180 150 10 s 100 s 120 1 ms ...

Page 5

... Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2000 Fairchild Semiconductor International Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2000 Fairchild Semiconductor International + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Mechanical Dimensions ©2000 Fairchild Semiconductor International TO-3PN Dimensions in Millimeters Rev. A, September 2000 ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ CMOS™ EnSigna™ FACT™ FACT Quiet Series™ ...

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