FQA160N08 Fairchild Semiconductor, FQA160N08 Datasheet - Page 3

• Manufacturer Part Number: FQA160N08
• Description: MOSFET N-CH 80V 160A TO-3P
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQA160N08

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 290nC @ 10V
• Input Capacitance (ciss) @ Vds: 7900pF @ 25V
• Power - Max: 375W
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.007 Ohms
• Forward Transconductance Gfs (max / Min): 92 S
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 160 A
• Power Dissipation: 375 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2000 Fairchild Semiconductor International
Typical Characteristics
20000
18000
16000
14000
12000
10000
8000
6000
4000
2000
10
10
20
15
10
5
0
2
1
0
10
10
0
Figure 5. Capacitance Characteristics
-1
Figure 3. On-Resistance Variation vs.
-1
Top :
Bottom : 4.5 V
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
V
GS
200
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
D
10
, Drain Current [A]
400
0
10
0
V
V
GS
GS
= 20V
= 10V
600
C
C
C
oss
iss
rss
C
C
C
iss
oss
rss
※ Notes :
= C
= C
= C
10
1. 250μ s Pulse Test
2. T
gs
gd
※ Note : T
ds
1
C
+ C
+ C
800
= 25℃
10
gd
gd
※ Notes :
1
(C
1. V
2. f = 1 MHz
ds
J
= shorted)
GS
= 25℃
= 0 V
1000
10
10
10
10
10
10
10
10
12
10
-1
8
6
4
2
0
2
1
0
-1
2
1
0
0.2
2
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
25℃
175℃
175℃
Figure 2. Transfer Characteristics
0.4
Variation vs. Source Current
40
0.6
25℃
4
V
V
Q
GS
and Temperature
SD
G
80
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
, Total Gate Charge [nC]
-55℃
0.8
V
DS
V
= 64V
120
1.0
DS
6
= 40V
1.2
160
※ Notes :
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
1.4
※ Note : I
8
DS
GS
= 30V
= 0V
200
D
1.6
= 160A
Rev. A, September 2000
240
1.8
10