FQA160N08 Fairchild Semiconductor, FQA160N08 Datasheet - Page 2

• Manufacturer Part Number: FQA160N08
• Description: MOSFET N-CH 80V 160A TO-3P
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQA160N08

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 290nC @ 10V
• Input Capacitance (ciss) @ Vds: 7900pF @ 25V
• Power - Max: 375W
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.007 Ohms
• Forward Transconductance Gfs (max / Min): 92 S
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 160 A
• Power Dissipation: 375 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2000 Fairchild Semiconductor International
Electrical Characteristics
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.086mH, I
3. I
4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
6. Continuous Drain Current Calculated by Maximum Junction Temperature : Limited by Package
Off Characteristics
BV
/
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Symbol
DSS
GSSF
GSSR
d(on)
r
d(off)
f
S
SM
rr
SD
FS
BV
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
DSS
≤ 160A, di/dt ≤ 300A/ s, V
DSS
T
J
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
AS
= 160A, V
DD
= 25V, R
DD
Parameter
≤ BV
G
DSS,
= 25
Starting T
Starting T
J
T
= 25°C
C
J
= 25°C unless otherwise noted
= 25°C
V
I
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
DS
GS
GS
GS
G
F
= 250 A, Referenced to 25°C
= 25
/ dt = 100 A/ s
= 80 V, V
= 64 V, T
= V
= 30 V, I
= 25 V, V
= 64 V, I
= 0 V, I
= 25 V, V
= -25 V, V
= 10 V, I
= 40 V, I
= 10 V
= 0 V, I
= 0 V, I
Test Conditions
GS
, I
D
S
S
D
D
D
D
D
= 250 A
C
= 160 A
= 160 A,
GS
GS
DS
= 250 A
DS
= 80 A
= 160 A,
= 80 A
= 160 A,
= 150°C
= 0 V
= 0 V
= 0 V,
= 0 V
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 6)
(Note 4)
Min
2.0
80
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--
0.0056
6100
2400
0.08
Typ
530
970
260
410
225
120
125
510
92
85
43
--
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--
--
--
--
--
--
0.007
7900
3100
2000
Max
-100
100
690
180
530
830
290
160
640
4.0
1.5
10
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1
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Rev. A, September 2000
Units
V/°C
nC
nC
nC
nC
nA
nA
pF
pF
pF
ns
ns
ns
ns
ns
A
V
V
S
A
V
A
A