NDT456P Fairchild Semiconductor, NDT456P Datasheet - Page 5

• Manufacturer Part Number: NDT456P
• Description: MOSFET P-CH 30V 7.5A SOT-223-4
• Manufacturer: Fairchild Semiconductor

Specifications of NDT456P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 67nC @ 10V
• Input Capacitance (ciss) @ Vds: 1440pF @ 15V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.03 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 13 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.5 A
• Power Dissipation: 3000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Continuous Drain Current Id: 7.3A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 35mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: 1.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDT456PTR

Typical Electrical Characteristics
V
GS
4000
3000
2000
1000
1 .0 8
1 .0 6
1 .0 4
1 .0 2
0 .9 8
0 .9 6
0 .9 4
500
400
300
200
1 .1
Figure 9. Capacitance Characteristics.
1
0.1
Figure 11. Switching Test Circuit
-5 0
Figure 7. Breakdown Voltage Variation with
I
R
D
0.2
GEN
=- 250µA
f = 1 MHz
V
-2 5
GS
Temperature.
= 0V
V
DS
T
V
0
J
0.5
, DRAIN TO SOURCE VOLTAGE (V)
IN
, JU N CTION T EM PERA T U RE (°C)
G
2 5
1
-V
D
5 0
S
2
DD
R
7 5
L
5
DUT
1 0 0
.
10
C oss
C iss
C rss
1 2 5
V
OUT
20 30
1 5 0
V
t
V
OUT
d(on)
Figure 10. Gate Charge Characteristics.
IN
0.0001
10
0.001
8
6
4
2
0
10%
0.01
0
0.1
20
Figure 8. Body Diode Forward Voltage Variation
5
1
I = -7.5A
0
D
Figure 12. Switching Waveforms.
V
GS
with Current and Temperature
t
= 0V
10
50%
on
10%
-V
0.2
SD
, BODY DIODE FORWARD VOLTAGE (V)
t
90%
PULSE W IDTH
r
Q
20
g
0.4
T = 125°C
J
, GATE CHARGE (nC)
30
t
0.6
d(off)
V
25°C
DS
=- 5V
-55°C
50%
40
0.8
-10V
90%
-20V
t
10%
off
90%
.
50
1
INVERTED
NDT456P Rev. F
t
f
1.2
60