NDT456P Fairchild Semiconductor, NDT456P Datasheet - Page 4

• Manufacturer Part Number: NDT456P
• Description: MOSFET P-CH 30V 7.5A SOT-223-4
• Manufacturer: Fairchild Semiconductor

Specifications of NDT456P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 67nC @ 10V
• Input Capacitance (ciss) @ Vds: 1440pF @ 15V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.03 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 13 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.5 A
• Power Dissipation: 3000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Continuous Drain Current Id: 7.3A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 35mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: 1.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDT456PTR

Typical Electrical Characteristics
-20
-16
-12
-8
-4
-20
-16
-12
0
-0.8
1 .2 5
0 .7 5
Figure 3. On-Resistance Variation with
-8
-4
0
1 .5
0 .5
Figure 1. On-Region Characteristics.
Figure 5. Transfer Characteristics.
V
0
1
-50
DS
V
V
GS
-5.0
=- 10V
I
GS
Temperature.
-6.0
D
= -10V
=-7.5A
= -10V
-25
V
-1.6
GS
V
DS
, GATE TO SOURCE VOLTAGE (V)
0
T , JUNCTION TEMPERATURE (°C)
J
, DRAIN-SOURCE VOLTAGE (V)
-4.5
-1
-4.0
2 5
-2.4
-3.5
5 0
-3.0
7 5
-2
T = -55°C
J
-3.2
1 0 0
-2.5
25
1 2 5
125
-3
1 5 0
-4
2.5
1.5
0.5
1.2
1.1
0.9
0.8
0.7
0.6
2.5
1.5
0.5
Figure 4. On-Resistance Variation with Drain
2
1
0
1
-50
2
1
0
Figure 6. Gate Threshold Variation with
Figure 2. On-Resistance Variation with Gate
0
V
V
GS
GS
Current and Temperature.
=-3.5V
-25
= -10V
Temperature.
Voltage and Drain Current.
-4
-4
T , JUNCTION TEM PERATURE (°C)
0
J
T = 125°C
J
I , DRAIN CURRENT (A)
I
D
D
2 5
-4.0
, DRAIN CURRENT (A)
-8
-8
-4.5
5 0
-12
-5.0
-12
7 5
25°C
-7.0
1 0 0
I
D
V
DS
=- 250µA
-16
-16
= V
-55°C
1 2 5
GS
-10
NDT456P Rev. F
1 5 0
-20
-20