NDT456P Fairchild Semiconductor, NDT456P Datasheet - Page 2

• Manufacturer Part Number: NDT456P
• Description: MOSFET P-CH 30V 7.5A SOT-223-4
• Manufacturer: Fairchild Semiconductor

Specifications of NDT456P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 67nC @ 10V
• Input Capacitance (ciss) @ Vds: 1440pF @ 15V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.03 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 13 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.5 A
• Power Dissipation: 3000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Continuous Drain Current Id: 7.3A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 35mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: 1.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDT456PTR

Electrical Characteristics
Symbol
OFF CHARACTERISTICS
BV
I
I
I
ON CHARACTERISTICS
V
R
I
G
DYNAMIC CHARACTERISTICS
C
C
C
SWITCHING CHARACTERISTICS
t
t
t
t
Q
Q
Q
DSS
GSSF
GSSR
D(on)
D(on)
r
D(off)
f
GS(th)
DS(ON)
iss
oss
rss
fs
g
gs
gd
DSS
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(Note 2)
(Note 2)
(T
A
= 25°C unless otherwise noted)
Conditions
V
V
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
I
D
GS
DS
GS
GS
DS
GS
GS
GS
GS
GS
DS
DD
GEN
DS
= -7.5 A, V
= 0 V, I
= -24 V, V
= 20 V, V
= -20 V, V
= V
= -10 V, I
= - 4.5 V, I
= -10 V , V
= -4.5 V, V
= -10 V, I
= -15 V, V
= -15 V, I
= -10 V,
= -10 V, R
GS
, I
D
D
GS
= 250 µA
D
D
= - 250 µA
DS
D
GS
DS
DS
GS
D
GEN
DS
= -7.5 A
= -7 A,
= -10 V
= -7.5 A
= 0 V
= 0 V
= -6 A
= 0 V
= 0 V,
= - 5 V
= - 5 V
= 12
T
T
T
J
J
J
= 55°C
= 125°C
= 125°C
Min
-0.5
-30
-20
-10
-1
0.026
0.035
0.041
1440
Typ
-1.5
-1.1
905
355
13
10
65
70
70
47
12
5
0.054
0.045
Max
-100
0.03
100
-2.6
120
130
130
-10
20
67
-1
-3
NDT456P Rev. F
Units
µA
µA
nA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
A
S