FDS6679 Fairchild Semiconductor, FDS6679 Datasheet - Page 4

MOSFET P-CH 30V 13A 8SOIC

FDS6679

Manufacturer Part Number
FDS6679
Description
MOSFET P-CH 30V 13A 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDS6679

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9 mOhm @ 13A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
13A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
100nC @ 10V
Input Capacitance (ciss) @ Vds
3939pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
P Channel
Continuous Drain Current Id
13A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
7.3mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-1.6V
Transistor Case Style
SOIC
Rohs Compliant
Yes
Dc
04+
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Typical Characteristics
0.01
100
10
0.1
10
8
6
4
2
0
Figure 9. Maximum Safe Operating Area.
1
0.01
0
Figure 7. Gate Charge Characteristics.
SINGLE PULSE
0.001
R
I
R
D
0.01
θJA
DS(ON)
V
= -13A
0.1
T
GS
10
A
0.0001
1
= 125
= 25
= -10V
LIMIT
D = 0.5
o
o
C/W
C
0.2
0.1
20
0.05
-V
0.1
0.02
0.01
DS
, DRAIN-SOURCE VOLTAGE (V)
Q
g
30
, GATE CHARGE (nC)
SINGLE PULSE
0.001
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
40
DC
1
Figure 11. Transient Thermal Response Curve.
V
10s
DS
1s
50
= -5V
100ms
10ms
0.01
60
1ms
10
-15V
100µs
70
-10V
100
80
0.1
t
1
, TIME (sec)
6000
5000
4000
3000
2000
1000
50
40
30
20
10
0
0.001
0
Figure 8. Capacitance Characteristics.
0
1
Figure 10. Single Pulse Maximum
0.01
5
-V
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
0.1
10
10
C
C
C
t
RSS
1
OSS
ISS
, TIME (sec)
15
1
Duty Cycle, D = t
P(pk)
T
R
J
R
θJA
- T
θJA
(t) = r(t) * R
100
A
= 125
20
10
= P * R
t
1
t
2
SINGLE PULSE
o
R
C/W
θJA
θJA
T
f = 1 MHz
V
FDS6679 Rev C1 (W)
θJA
1
A
GS
= 125°C/W
100
(t)
25
/ t
= 25°C
= 0 V
2
1000
1000
30

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