FDS6679 Fairchild Semiconductor, FDS6679 Datasheet - Page 3
![MOSFET P-CH 30V 13A 8SOIC](/photos/5/42/54236/261-8-soic_sml.jpg)
FDS6679
Manufacturer Part Number
FDS6679
Description
MOSFET P-CH 30V 13A 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS6679.pdf
(4 pages)
Specifications of FDS6679
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9 mOhm @ 13A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
13A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
100nC @ 10V
Input Capacitance (ciss) @ Vds
3939pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
P Channel
Continuous Drain Current Id
13A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
7.3mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-1.6V
Transistor Case Style
SOIC
Rohs Compliant
Yes
Dc
04+
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Company
Part Number
Manufacturer
Quantity
Price
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Part Number:
FDS6679
Manufacturer:
FSC
Quantity:
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Part Number:
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Manufacturer:
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Quantity:
70 000
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Part Number:
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Part Number:
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Quantity:
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Part Number:
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Typical Characteristics
50
40
30
20
10
50
40
30
20
10
0
0
1.5
0
Figure 3. On-Resistance Variation with
1.6
1.4
1.2
0.8
0.6
V
Figure 1. On-Region Characteristics.
1
-6.0V
GS
-4.5V
-50
V
Figure 5. Transfer Characteristics.
DS
= -10V
V
= -5.0V
I
D
GS
= -13A
-25
= -10V
-V
-V
0.5
DS
2
GS
-4.0V
0
, DRAIN TO SOURCE VOLTAGE (V)
T
, GATE TO SOURCE VOLTAGE (V)
-3.5V
J
T
, JUNCTION TEMPERATURE (
Temperature.
A
= -125
25
o
C
25
50
2.5
1
o
C
-55
75
o
C
-3.0V
100
1.5
3
o
C)
125
-2.5V
150
175
3.5
2
Figure 6. Body Diode Forward Voltage Variation
0.04
0.03
0.02
0.01
0.0001
0.001
2.6
2.2
1.8
1.4
0.6
0.01
0
100
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
0.1
with Source Current and Temperature.
3
1
10
2
1
0
0
Drain Current and Gate Voltage.
V
GS
V
GS
T
= 0V
A
2.5
= -3.0V
Gate-to-Source Voltage.
= 25
0.2
-V
10
-V
SD
o
T
-3.5V
C
GS
, BODY DIODE FORWARD VOLTAGE (V)
A
, GATE TO SOURCE VOLTAGE (V)
= 125
-I
3
D
0.4
-4.0V
, DIRAIN CURRENT (A)
o
C
20
T
-4.5V
A
= 125
3.5
25
0.6
o
C
o
C
-5.0V
30
4
0.8
-55
-6.0V
o
C
I
D
40
FDS6679 Rev C1 (W)
= -7.0A
4.5
1
-10V
50
1.2
5