FDS6679 Fairchild Semiconductor, FDS6679 Datasheet
FDS6679
Manufacturer Part Number
FDS6679
Description
MOSFET P-CH 30V 13A 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS6679.pdf
(4 pages)
Specifications of FDS6679
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9 mOhm @ 13A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
13A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
100nC @ 10V
Input Capacitance (ciss) @ Vds
3939pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
P Channel
Continuous Drain Current Id
13A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
7.3mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-1.6V
Transistor Case Style
SOIC
Rohs Compliant
Yes
Dc
04+
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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20 000
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50 000
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FDS6679
30 Volt P-Channel PowerTrench
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers, and battery chargers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
©2005 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
DS(ON)
J
DSS
GSS
D
θJA
θJC
, T
Device Marking
STG
P-Channel
specifications.
FDS6679
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
D
MOSFET
SO-8
D
D
– Continuous
– Pulsed
has
FDS6679
S
Device
Parameter
S
been
S
G
designed
T
A
=25
®
o
C unless otherwise noted
MOSFET
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1)
Features
• –13 A, –30 V. R
• Extended V
• High performance trench technology for extremely
• High power and current handling capability
low R
DS(ON)
GSS
5
6
7
8
Tape width
R
range (±25V) for battery applications
DS(ON)
DS(ON)
–55 to +175
12mm
Ratings
–30
±25
–13
–50
2.5
1.2
1.0
50
25
= 9 mΩ @ V
= 13 mΩ @ V
GS
4
3
2
1
March 2005
GS
= –10 V
= – 4.5 V
FDS6679 Rev C1 (W)
2500 units
Quantity
Units
°C/W
°C/W
°C
W
V
V
A
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Datasheet:
FDS6679 Summary of contents
Page 1
... March 2005 = 9 mΩ –10 V DS(ON mΩ – 4.5 V DS(ON) GS range (±25V) for battery applications GSS Ratings Units –30 V ±25 V –13 A –50 2.5 W 1.2 1.0 °C –55 to +175 °C/W 50 °C/W 25 Tape width Quantity 12mm 2500 units FDS6679 Rev C1 (W) ...
Page 2
... Min Typ Max Units –30 V –23 mV/°C µA –1 ±100 nA –1 –1.6 – mV/°C 7.3 9 mΩ 9.5 13 – 3939 pF 972 pF 498 110 176 ns 65 104 ns 71 100 –2.1 A –0.7 –1 125°C/W when mounted on a minimum pad. FDS6679 Rev C1 (W) ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = -3.0V -3.5V -4.0V -4.5V -5.0V -6.0V -10V DIRAIN CURRENT ( -7. 125 2.5 3 3 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS6679 Rev C1 ( 1.2 ...
Page 4
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 125°C/W θ 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( θJA θ 125 C/W θJA P(pk (t) θ Duty Cycle 100 1000 FDS6679 Rev C1 (W) ...