FDS6679 Fairchild Semiconductor, FDS6679 Datasheet - Page 2
![MOSFET P-CH 30V 13A 8SOIC](/photos/5/42/54236/261-8-soic_sml.jpg)
FDS6679
Manufacturer Part Number
FDS6679
Description
MOSFET P-CH 30V 13A 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS6679.pdf
(4 pages)
Specifications of FDS6679
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9 mOhm @ 13A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
13A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
100nC @ 10V
Input Capacitance (ciss) @ Vds
3939pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
P Channel
Continuous Drain Current Id
13A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
7.3mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-1.6V
Transistor Case Style
SOIC
Rohs Compliant
Yes
Dc
04+
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDS6679
Manufacturer:
FSC
Quantity:
60 000
Company:
Part Number:
FDS6679
Manufacturer:
FAIRCHIL
Quantity:
70 000
Part Number:
FDS6679
Manufacturer:
ON/FAI
Quantity:
20 000
Part Number:
FDS6679-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDS6679AZ
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDS6679AZ-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS6679Z
Manufacturer:
FSC
Quantity:
50 000
Company:
Part Number:
FDS6679Z
Manufacturer:
FAIRCHIL
Quantity:
70 000
Part Number:
FDS6679Z
Manufacturer:
FIR
Quantity:
20 000
Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Electrical Characteristics
Symbol
Off Characteristics
BV
∆BV
I
I
On Characteristics
V
∆V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
the drain pins. R
DSS
GSS
D(on)
d(on)
r
d(off)
f
S
FS
GS(th)
SD
θJA
∆T
∆T
DS(on)
iss
oss
rss
g
gs
gd
GS(th)
DSS
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
DSS
J
J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
θJC
is guaranteed by design while R
a) 50°C/W (10 sec)
62.5°C/W steady state
when mounted on a
1in
copper
Parameter
2
pad of 2 oz
(Note 2)
(Note 2)
θCA
is determined by the user's board design.
V
I
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
T
D
D
A
GS
DS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= –250 µA, Referenced to 25°C
= –250 µA, Referenced to 25°C
= 25°C unless otherwise noted
=–10 V, I
b) 105°C/W when
= 0 V, I
= –24 V,
= ±25 V,
= V
= –10 V,
= –4.5 V,
= –10 V,
= –5 V,
= –15 V,
= –15 V,
= –10 V,
= –15 V,
= –10 V
= 0 V,
mounted on a .04 in
pad of 2 oz copper
Test Conditions
GS
, I
D
D
D
= –250 µA
I
= –250 µA
S
=–13 A, T
= –2.1 A
V
V
I
I
V
I
GS
D
D
V
I
I
R
D
DS
D
D
GS
DS
= –13 A
= –11 A
GEN
= –13 A,
= 0 V
= –13 A
= –1 A,
= 0 V
= 0 V,
2
= –5 V
= 6 Ω
J
=125°C
(Note 2)
Min
–30
–50
–1
c) 125°C/W when mounted on a
3939
Typ Max Units
–1.6
–0.7
–23
972
498
110
minimum pad.
7.3
9.5
10
44
19
10
65
71
12
15
5
±100
–2.1
–1.2
176
104
100
–1
–3
13
13
34
20
9
FDS6679 Rev C1 (W)
mV/°C
mV/°C
mΩ
nC
nC
nC
µA
nA
pF
pF
pF
ns
ns
ns
ns
V
V
A
S
A
V