FDC642P Fairchild Semiconductor, FDC642P Datasheet - Page 4

• Manufacturer Part Number: FDC642P
• Description: MOSFET P-CH 20V 4A SSOT-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC642P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 65 mOhm @ 4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 640pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.065 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 9 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 4 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
FDC642P Rev.C2
Typical Characteristics
Figure 7. Gate Charge Characteristics
0.01
0.001
0.1
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
50
10
0.01
1
0.1
0.1
0
1
2
10
I
THIS AREA IS
LIMITED BY r
SINGLE PULSE
T
R
T
D
-4
J
A
Figure 9. Forward Bias Safe
θ
= -4.0 A
JA
= MAX RATED
= 25
= 156
DUTY CYCLE-DESCENDING ORDER
D = 0.5
-V
o
C
0.2
0.1
0.05
0.02
0.01
DS
o
Operating Area
3
, DRAIN to SOURCE VOLTAGE (V)
C/W
DS(on)
Q
V
Figure 11.
DD
g
, GATE CHARGE (nC)
10
1
= -5 V
-3
SINGLE PULSE
R
θ
JA
6
= 156
V
T
DD
Junction-to-Ambient Transient Thermal Response Curve
J
= -15 V
= 25°C unless otherwise noted
o
V
C/W
DD
10
10
= -10 V
-2
9
t, RECTANGULAR PULSE DURATION (sec)
100
100 ms
1 ms
10 ms
1 s
10 s
DC
µ
s
12
60
10
-1
4
1000
2000
1000
100
100
0.5
10
1
10
1
10
0.1
Figure 10. Single Pulse Maximum
-4
Figure 8. Capacitance vs Drain
SINGLE PULSE
R
T
f = 1 MHz
V
A
θ
GS
JA
= 25
10
= 0 V
= 156
V
GS
-3
-V
o
C
DS
= -4.5 V
NOTES:
DUTY FACTOR: D = t
PEAK T
Power Dissipation
to Source Voltage
o
, DRAIN TO SOURCE VOLTAGE (V)
C/W
10
10
-2
t, PULSE WIDTH (sec)
J
= P
10
DM
1
-1
x Z
P
θJA
DM
1
1
/t
x R
100
2
θJA
t
1
+ T
10
t
2
A
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100
C
C
C
10
iss
oss
rss
1000
1000
20