FDC642P Fairchild Semiconductor, FDC642P Datasheet
FDC642P
Specifications of FDC642P
Available stocks
Related parts for FDC642P
FDC642P Summary of contents
Page 1
... Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device .642 FDC642P ©2010 Fairchild Semiconductor Corporation FDC642P Rev.C2 General Description = -4.0 A This P-Channel 2.5V specified MOSFET is produced using D Fairchild’s advanced PowerTrench = -3 especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance ...
Page 2
... Pulse Test: Pulse Width<300 us, Duty Cycle<2.0%. ©2010 Fairchild Semiconductor Corporation FDC642P Rev. 25°C unless otherwise noted J Test Conditions = -250 µ -250 µA, referenced to 25°C ...
Page 3
... Junction Temperature 20 µ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 - 0.5 1.0 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDC642P Rev. 25°C unless otherwise noted -2 -1 µ 180 150 120 100 125 150 0 0.01 2.0 2.5 3.0 ...
Page 4
... Figure 9. Forward Bias Safe Operating Area 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE R θ JA 0.001 - Figure 11. ©2010 Fairchild Semiconductor Corporation FDC642P Rev. 25°C unless otherwise noted J 2000 1000 100 1000 µ 100 s 100 100 ms 10 ...
Page 5
... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2009 Fairchild Semiconductor Corporation FDC642P Rev. C2 ® FlashWriter * PDP SPM™ FPS™ Power-SPM™ F-PFS™ PowerTrench ® FRFET PowerXS™ ...