FDC642P Fairchild Semiconductor, FDC642P Datasheet - Page 3

• Manufacturer Part Number: FDC642P
• Description: MOSFET P-CH 20V 4A SSOT-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC642P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 65 mOhm @ 4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 640pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.065 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 9 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 4 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
FDC642P Rev.C2
Typical Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
20
16
12
20
16
12
8
4
0
Figure 3. Normalized On Resistance
8
4
0
-75
Figure 1.
0.5
0
Figure 5. Transfer Characteristics
I
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
D
GS
DS
T
= -4.0 A
-50
J
= -4.5 V
= -5 V
= 150
vs Junction Temperature
1.0
-V
T
-V
1
-25
J
o
DS
GS
,
On Region Characteristics
C
JUNCTION TEMPERATURE (
,
, GATE TO SOURCE VOLTAGE (V)
DRAIN TO SOURCE VOLTAGE (V)
V
V
V
V
GS
0
GS
GS
GS
T
= -3.5 V
1.5
= -4.5 V
J
= -3.0 V
= -2.5 V
2
= -55
25
µ
T
s
J
o
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
= 25
C
50
T
2.0
J
3
o
C
= 25°C unless otherwise noted
75
o
100 125 150
V
V
C )
2.5
GS
GS
4
= -1.5 V
= -2.0 V
µ
s
3.0
5
3
0.01
180
150
120
0.1
10
90
60
30
1
5
4
3
2
1
0
0.2
Figure 2.
1.0
Figure 4.
0
Forward Voltage vs Source Current
vs Drain Current and Gate Voltage
Figure 6.
V
GS
T
V
J
GS
-V
= 0 V
= 150
1.5
= -1.5 V
SD
0.4
-V
, BODY DIODE FORWARD VOLTAGE (V)
4
Normalized On-Resistance
On-Resistance vs Gate to
o
GS
C
Source Voltage
V
Source to Drain Diode
,
2.0
GS
GATE TO SOURCE VOLTAGE (V)
-I
D
= -3.0 V
,
DRAIN CURRENT (A)
0.6
8
T
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
2.5
J
= -55
T
T
T
J
J
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
J
V
= 125
= 25
= 25
GS
o
3.0
C
V
= -3.5 V
0.8
GS
12
o
o
o
C
C
C
= -2.0 V
3.5
I
V
D
1.0
V
GS
16
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= -4.0 A
GS
µ
= -4.5 V
4.0
s
= -2.5 V
µ
s
1.2
20
4.5