FDN342P Fairchild Semiconductor, FDN342P Datasheet - Page 4

• Manufacturer Part Number: FDN342P
• Description: MOSFET P-CH 20V 2A SSOT-3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDN342P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 9nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 635pF @ 10V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.08 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 7 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 2 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.01
5
4
3
2
1
0
100
0.1
10
0
1
0.1
I
R
D
DS(ON)
= -2A
SINGLE PULSE
0.005
0.002
0.001
R
0.05
0.02
0.01
V
0.5
0.2
0.1
JA
T
0.0001
GS
1
A
= 270
LIMIT
= 25
= -4.5V
D = 0.5
o
o
2
C/W
C
-V
0.2
DS
, DRAIN-SOURCE VOLTAGE (V)
0.1
Q
0.05
1
g
, GATE CHARGE (nC)
0.02
DC
0.01
10s
0.001
Single Pulse
4
1s
100ms
10ms
V
DS
= -5V
10
1ms
6
-15V
0.01
-10V
100
8
0.1
t , TIME (sec)
1
1000
20
16
12
0.0001
800
600
400
200
8
4
0
0
0
0.001
1
C
-V
ISS
0.01
DS
5
SINGLE PULSE TIME (SEC)
, DRAIN TO SOURCE VOLTAGE (V)
0.1
C
OSS
P(pk)
10
10
T - T
R
Duty Cycle, D = t /t
J
C
R
1
JA
RSS
t
JA
1
A
(t) = r(t) * R
t
= P * R
2
= 270 °C/W
SINGLE PULSE
R
10
JA
T
=270
A
15
JA
=25
100
1
JA
(t)
2
o
o
C/W
C
100
V
f = 1MHz
GS
= 0 V
300
1000
20