FDN342P Fairchild Semiconductor, FDN342P Datasheet
FDN342P
Manufacturer Part Number
FDN342P
Description
MOSFET P-CH 20V 2A SSOT-3
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDN342P.pdf
(5 pages)
Specifications of FDN342P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
80 mOhm @ 2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
9nC @ 4.5V
Input Capacitance (ciss) @ Vds
635pF @ 10V
Power - Max
460mW
Mounting Type
Surface Mount
Package / Case
3-SSOT, SuperSOT-3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.08 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
7 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
2 A
Power Dissipation
500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDN342P
Manufacturer:
FAIRCHILD
Quantity:
30 000
Part Number:
FDN342P
Manufacturer:
FAI
Quantity:
20 000
Part Number:
FDN342P-NL
Manufacturer:
ON/安森美
Quantity:
20 000
FDN342P
Absolute Maximum Ratings
V
V
I
P
T
Thermal Characteristics
R
R
Package Outlines and Ordering Information
Symbol
D
J
DSS
GSS
D
, T
JA
JC
Device Marking
stg
FDN342P
SuperSOT -3
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
TM
G
- Continuous
- Pulsed
Parameter
FDN342P
Device
S
T
A
= 25°C unless otherwise noted
Reel Size
TM
7’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1)
DS(ON)
G
DS(ON)
DS(ON)
Tape Width
-55 to +150
Ratings
8mm
D
0.46
250
-20
-10
0.5
75
-2
12
TM
S
GS
GS
3000 units
Quantity
Units
C/W
C/W
W
V
V
A
C
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FDN342P Summary of contents
Page 1
... T Operating and Storage Junction Temperature Range J stg Thermal Characteristics Thermal Resistance, Junction-to-Ambient R JA Thermal Resistance, Junction-to-Case R JC Package Outlines and Ordering Information Device Marking FDN342P FDN342P TM DS(ON 25°C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1a) (Note 1) Device Reel Size 7’’ ...
Page 2
Electrical Characteristics Symbol Parameter Off Characteristics BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature BV DSS Coefficient Zero Gate Voltage Drain Current DSS I Gate-Body Leakage Current, GSSF Forward I Gate-Body Leakage Current, GSSR Reverse On Characteristics ...
Page 3
V = -4.5V GS -4.0V -3.5V 15 -3.0V 10 -2.5V 5 -2. DRAIN-SOURCE VOLTAGE ( -2. -4.5V GS 1.4 1.2 1 0.8 0.6 -50 -25 ...
Page 4
GATE CHARGE (nC) g 100 R LIMIT 10 DS(ON) 1ms 10ms 1 100ms -4.5V 10s GS DC SINGLE ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ GTO™ ...