FDN342P Fairchild Semiconductor, FDN342P Datasheet - Page 3
![MOSFET P-CH 20V 2A SSOT-3](/photos/5/45/54562/261-supersot-3_sml.jpg)
FDN342P
Manufacturer Part Number
FDN342P
Description
MOSFET P-CH 20V 2A SSOT-3
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDN342P.pdf
(5 pages)
Specifications of FDN342P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
80 mOhm @ 2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
9nC @ 4.5V
Input Capacitance (ciss) @ Vds
635pF @ 10V
Power - Max
460mW
Mounting Type
Surface Mount
Package / Case
3-SSOT, SuperSOT-3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.08 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
7 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
2 A
Power Dissipation
500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDN342P
Manufacturer:
FAIRCHILD
Quantity:
30 000
Part Number:
FDN342P
Manufacturer:
FAI
Quantity:
20 000
Part Number:
FDN342P-NL
Manufacturer:
ON/安森美
Quantity:
20 000
8
6
4
2
0
20
15
10
0.4
5
0
1.6
1.4
1.2
0.8
0.6
0
1
V
-50
DS
= -5V
V
V
I
GS
D
GS
= -2.0A
-25
= -4.5V
= -4.5V
1
-V
GS
-V
, GATE TO SOURCE VOLTAGE (V)
T
DS
0
-4.0V
J
, JUNCTION TEMPERATURE (
1.4
, DRAIN-SOURCE VOLTAGE (V)
-3.5V
25
2
T
-3.0V
A
= -55
50
o
C
3
-2.5V
75
2.4
-2.0V
125
100
o
25
C)
o
o
C
C
4
125
150
3.4
5
0.3
0.2
0.1
0.0001
0.001
0
0.01
1.8
1.6
1.4
1.2
0.8
100
1
0.1
10
2
1
1
0
0
V
GS
V
= 0V
GS
0.2
= -2.5V
-V
-V
4
SD
2
GS
, BODY DIODE FORWARD VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
0.4
- I
D
-3.0V
, DRAIN CURRENT (A)
8
T
0.6
A
= 125
3
-3.5V
T
T
A
A
25
o
= 125
= 25
C
o
0.8
-55
C
12
-4.0V
o
C
o
o
C
C
1
-4.5V
4
16
I
D
= -1A
1.2
20
1.4
5