FDN342P Fairchild Semiconductor, FDN342P Datasheet - Page 3

• Manufacturer Part Number: FDN342P
• Description: MOSFET P-CH 20V 2A SSOT-3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDN342P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 9nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 635pF @ 10V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.08 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 7 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 2 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

8
6
4
2
0
20
15
10
0.4
5
0
1.6
1.4
1.2
0.8
0.6
0
1
V
-50
DS
= -5V
V
V
I
GS
D
GS
= -2.0A
-25
= -4.5V
= -4.5V
1
-V
GS
-V
, GATE TO SOURCE VOLTAGE (V)
T
DS
0
-4.0V
J
, JUNCTION TEMPERATURE (
1.4
, DRAIN-SOURCE VOLTAGE (V)
-3.5V
25
2
T
-3.0V
A
= -55
50
o
C
3
-2.5V
75
2.4
-2.0V
125
100
o
25
C)
o
o
C
C
4
125
150
3.4
5
0.3
0.2
0.1
0.0001
0.001
0
0.01
1.8
1.6
1.4
1.2
0.8
100
1
0.1
10
2
1
1
0
0
V
GS
V
= 0V
GS
0.2
= -2.5V
-V
-V
4
SD
2
GS
, BODY DIODE FORWARD VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
0.4
- I
D
-3.0V
, DRAIN CURRENT (A)
8
T
0.6
A
= 125
3
-3.5V
T
T
A
A
25
o
= 125
= 25
C
o
0.8
-55
C
12
-4.0V
o
C
o
o
C
C
1
-4.5V
4
16
I
D
= -1A
1.2
20
1.4
5