FDN342P Fairchild Semiconductor, FDN342P Datasheet - Page 2
![MOSFET P-CH 20V 2A SSOT-3](/photos/5/45/54562/261-supersot-3_sml.jpg)
FDN342P
Manufacturer Part Number
FDN342P
Description
MOSFET P-CH 20V 2A SSOT-3
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDN342P.pdf
(5 pages)
Specifications of FDN342P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
80 mOhm @ 2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
9nC @ 4.5V
Input Capacitance (ciss) @ Vds
635pF @ 10V
Power - Max
460mW
Mounting Type
Surface Mount
Package / Case
3-SSOT, SuperSOT-3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.08 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
7 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
2 A
Power Dissipation
500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDN342P
Manufacturer:
FAIRCHILD
Quantity:
30 000
Part Number:
FDN342P
Manufacturer:
FAI
Quantity:
20 000
Part Number:
FDN342P-NL
Manufacturer:
ON/安森美
Quantity:
20 000
Electrical Characteristics
Off Characteristics
BV
I
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
V
Symbol
DSS
GSSF
GSSR
D(on)
d(on)
r
d(off)
f
S
FS
BV
V
GS(th)
DS(on)
iss
oss
rss
SD
g
gs
gd
GS(th)
DSS
T
T
DSS
J
J
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
2
Parameter
(Note 2)
(Note 2)
T
A
= 25°C unless otherwise noted
V
I
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
D
D
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= -250 A,Referenced to 25 C
= -250 A,Referenced to 25 C
= -16 V, V
= V
= -5 V, I
= -10 V, V
= -10 V, I
= 0 V, I
= 12 V, V
= -12 V, V
= -4.5 V, I
= -4.5 V, I
= -2.5 V, I
= -4.5 V, V
= -10 V, I
= -4.5 V, R
= -4.5 V,
= 0 V, I
Test Conditions
GS
, I
D
S
D
D
= -250 A
= -0.42 A
D
= -250 A
D
DS
= -5 A
D
D
D
GS
DS
GS
DS
= -1 A
GEN
= -2 A
= -2 A
= -2 A,T
= -1.5 A
= 0 V
= 0 V
= 0 V
= -5 V
= 0 V
= 6
J
=125 C
(Note 2)
Min
-0.6
-20
-5
0.062
0.086
0.099
Typ
-1.05
175
-0.7
635
-16
6.3
1.5
1.7
75
20
19
3
7
8
9
Max Units
-0.42
-100
0.08
0.14
0.13
-1.5
-1.2
100
35
16
18
32
-1
9
mV/ C
mV/ C
nA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
A
S
A
V
A