FDN342P Fairchild Semiconductor, FDN342P Datasheet - Page 2

• Manufacturer Part Number: FDN342P
• Description: MOSFET P-CH 20V 2A SSOT-3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDN342P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 9nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 635pF @ 10V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.08 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 7 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 2 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
Off Characteristics
BV
I
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
V
Symbol
DSS
GSSF
GSSR
D(on)
d(on)
r
d(off)
f
S
FS
BV
V
GS(th)
DS(on)
iss
oss
rss
SD
g
gs
gd
GS(th)
DSS
T
T
DSS
J
J
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
2
Parameter
(Note 2)
(Note 2)
T
A
= 25°C unless otherwise noted
V
I
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
D
D
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= -250 A,Referenced to 25 C
= -250 A,Referenced to 25 C
= -16 V, V
= V
= -5 V, I
= -10 V, V
= -10 V, I
= 0 V, I
= 12 V, V
= -12 V, V
= -4.5 V, I
= -4.5 V, I
= -2.5 V, I
= -4.5 V, V
= -10 V, I
= -4.5 V, R
= -4.5 V,
= 0 V, I
Test Conditions
GS
, I
D
S
D
D
= -250 A
= -0.42 A
D
= -250 A
D
DS
= -5 A
D
D
D
GS
DS
GS
DS
= -1 A
GEN
= -2 A
= -2 A
= -2 A,T
= -1.5 A
= 0 V
= 0 V
= 0 V
= -5 V
= 0 V
= 6
J
=125 C
(Note 2)
Min
-0.6
-20
-5
0.062
0.086
0.099
Typ
-1.05
175
-0.7
635
-16
6.3
1.5
1.7
75
20
19
3
7
8
9
Max Units
-0.42
-100
0.08
0.14
0.13
-1.5
-1.2
100
35
16
18
32
-1
9
mV/ C
mV/ C
nA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
A
S
A
V
A