FQB27P06TM Fairchild Semiconductor, FQB27P06TM Datasheet - Page 7
![MOSFET P-CH 60V 27A D2PAK](/photos/5/56/55635/fqb27p06tm_sml.jpg)
FQB27P06TM
Manufacturer Part Number
FQB27P06TM
Description
MOSFET P-CH 60V 27A D2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Specifications of FQB27P06TM
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
70 mOhm @ 13.5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
27A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
43nC @ 10V
Input Capacitance (ciss) @ Vds
1400pF @ 25V
Power - Max
3.75W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.07 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
12.4 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
27 A
Power Dissipation
3750 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
27A
Drain Source Voltage Vds
-60V
On Resistance Rds(on)
55mohm
Rds(on) Test Voltage Vgs
-10V
Transistor Case Style
D2-PAK
No. Of Pins
3
Svhc
No SVHC
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FQB27P06TM
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Package Dimensions
2
D
- PAK
Dimensions in Millimeters
©2008 Fairchild Semiconductor Corporation
Rev. A3. Oct 2008