FQB27P06TM Fairchild Semiconductor, FQB27P06TM Datasheet - Page 7

• Manufacturer Part Number: FQB27P06TM
• Description: MOSFET P-CH 60V 27A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQB27P06TM

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 70 mOhm @ 13.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 27A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 25V
• Power - Max: 3.75W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.07 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 12.4 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 27 A
• Power Dissipation: 3750 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 27A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 55mohm
• Rds(on) Test Voltage Vgs: -10V
• Transistor Case Style: D2-PAK
• No. Of Pins: 3
• Svhc: No SVHC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FQB27P06TM

Package Dimensions
2
D
- PAK
Dimensions in Millimeters
©2008 Fairchild Semiconductor Corporation
Rev. A3. Oct 2008