FQB27P06TM Fairchild Semiconductor, FQB27P06TM Datasheet - Page 3
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FQB27P06TM
Manufacturer Part Number
FQB27P06TM
Description
MOSFET P-CH 60V 27A D2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Specifications of FQB27P06TM
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
70 mOhm @ 13.5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
27A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
43nC @ 10V
Input Capacitance (ciss) @ Vds
1400pF @ 25V
Power - Max
3.75W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.07 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
12.4 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
27 A
Power Dissipation
3750 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
27A
Drain Source Voltage Vds
-60V
On Resistance Rds(on)
55mohm
Rds(on) Test Voltage Vgs
-10V
Transistor Case Style
D2-PAK
No. Of Pins
3
Svhc
No SVHC
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FQB27P06TM
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
©2008 Fairchild Semiconductor Corporation
Typical Characteristics
3000
2500
2000
1500
1000
0.24
0.20
0.16
0.12
0.08
0.04
0.00
500
10
10
10
2
1
0
0
10
10
0
Figure 5. Capacitance Characteristics
-1
Figure 3. On-Resistance Variation vs.
-1
Top :
Bottom : - 4.5 V
Figure 1. On-Region Characteristics
10
Drain Current and Gate Voltage
- 15.0 V
- 10.0 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
20
V
GS
30
-V
V
DS
DS
40
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
-I
V
D
10
GS
50
, Drain Current [A]
C
C
10
C
0
= - 20V
oss
rss
iss
0
60
V
70
GS
= - 10V
80
C
C
C
90 100 110 120 130
iss
oss
rss
※ Notes :
= C
= C
= C
10
1. 250μ s Pulse Test
2. T
※ Note : T
gs
gd
ds
1
C
+ C
+ C
= 25℃
10
※ Notes :
gd
gd
1
1. V
2. f = 1 MHz
(C
J
ds
GS
= 25℃
= shorted)
= 0 V
10
10
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
-1
2
1
0
2
1
0
0.0
0
2
Figure 6. Gate Charge Characteristics
175℃
Figure 4. Body Diode Forward Voltage
25℃
0.2
Figure 2. Transfer Characteristics
175℃
0.4
5
Variation vs. Source Current
0.6
-55℃
4
25℃
-V
-V
0.8
10
Q
SD
and Temperature
GS
G
, Source-Drain Voltage [V]
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
1.0
1.2
15
V
DS
1.4
6
V
= -48V
DS
= -30V
1.6
20
1.8
2.0
※ Notes :
25
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
※ Note : I
8
DS
2.2
GS
= -30V
= 0V
D
2.4
30
= -27 A
2.6
Rev. A3. Oct 2008
2.8
10
35