FQB27P06TM Fairchild Semiconductor, FQB27P06TM Datasheet - Page 3

• Manufacturer Part Number: FQB27P06TM
• Description: MOSFET P-CH 60V 27A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQB27P06TM

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 70 mOhm @ 13.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 27A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 25V
• Power - Max: 3.75W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.07 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 12.4 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 27 A
• Power Dissipation: 3750 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 27A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 55mohm
• Rds(on) Test Voltage Vgs: -10V
• Transistor Case Style: D2-PAK
• No. Of Pins: 3
• Svhc: No SVHC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FQB27P06TM

©2008 Fairchild Semiconductor Corporation
Typical Characteristics
3000
2500
2000
1500
1000
0.24
0.20
0.16
0.12
0.08
0.04
0.00
500
10
10
10
2
1
0
0
10
10
0
Figure 5. Capacitance Characteristics
-1
Figure 3. On-Resistance Variation vs.
-1
Top :
Bottom : - 4.5 V
Figure 1. On-Region Characteristics
10
Drain Current and Gate Voltage
- 15.0 V
- 10.0 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
20
V
GS
30
-V
V
DS
DS
40
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
-I
V
D
10
GS
50
, Drain Current [A]
C
C
10
C
0
= - 20V
oss
rss
iss
0
60
V
70
GS
= - 10V
80
C
C
C
90 100 110 120 130
iss
oss
rss
※ Notes :
= C
= C
= C
10
1. 250μ s Pulse Test
2. T
※ Note : T
gs
gd
ds
1
C
+ C
+ C
= 25℃
10
※ Notes :
gd
gd
1
1. V
2. f = 1 MHz
(C
J
ds
GS
= 25℃
= shorted)
= 0 V
10
10
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
-1
2
1
0
2
1
0
0.0
0
2
Figure 6. Gate Charge Characteristics
175℃
Figure 4. Body Diode Forward Voltage
25℃
0.2
Figure 2. Transfer Characteristics
175℃
0.4
5
Variation vs. Source Current
0.6
-55℃
4
25℃
-V
-V
0.8
10
Q
SD
and Temperature
GS
G
, Source-Drain Voltage [V]
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
1.0
1.2
15
V
DS
1.4
6
V
= -48V
DS
= -30V
1.6
20
1.8
2.0
※ Notes :
25
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
※ Note : I
8
DS
2.2
GS
= -30V
= 0V
D
2.4
30
= -27 A
2.6
Rev. A3. Oct 2008
2.8
10
35