FQB27P06TM Fairchild Semiconductor, FQB27P06TM Datasheet

MOSFET P-CH 60V 27A D2PAK

FQB27P06TM

Manufacturer Part Number
FQB27P06TM
Description
MOSFET P-CH 60V 27A D2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheets

Specifications of FQB27P06TM

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
70 mOhm @ 13.5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
27A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
43nC @ 10V
Input Capacitance (ciss) @ Vds
1400pF @ 25V
Power - Max
3.75W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.07 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
12.4 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
27 A
Power Dissipation
3750 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
27A
Drain Source Voltage Vds
-60V
On Resistance Rds(on)
55mohm
Rds(on) Test Voltage Vgs
-10V
Transistor Case Style
D2-PAK
No. Of Pins
3
Svhc
No SVHC
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FQB27P06TM

Available stocks

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Quantity
Price
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Quantity:
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Part Number:
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Quantity:
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©2008 Fairchild Semiconductor Corporation
FQB27P06 / FQI27P06
60V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as automotive,
DC/DC converters, and high efficiency switching for power
management in portable and battery operated products.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
JA
STG
G
S
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
FQB Series
D
2
-PAK
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
A
C
Parameter
Parameter
= 25°C) *
= 25°C)
G
D
T
S
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• -27A, -60V, R
• Low gate charge ( typical 33 nC)
• Low Crss ( typical 120 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175 C maximum junction temperature rating
• RoHS Compliant
FQI Series
I
2
-PAK
FQB27P06 / FQI27P06
DS(on)
Typ
--
--
--
-55 to +175
= 0.07
-19.1
-108
3.75
560
-7.0
120
300
-60
-27
-27
0.8
12
25
G
@V
! ! ! !
! ! ! !
Max
1.25
62.5
40
GS
= -10 V
▶ ▶ ▶ ▶
▶ ▶ ▶ ▶
October 2008
! ! ! !
! ! ! !
D
S
! ! ! !
! ! ! !
● ●
● ●
● ●
● ●
● ●
● ●
QFET
▲ ▲ ▲ ▲
▲ ▲ ▲ ▲
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
mJ
mJ
Rev. A3. Oct 2008
°C
°C
W
W
V
A
A
A
V
A
®

Related parts for FQB27P06TM

FQB27P06TM Summary of contents

Page 1

... Thermal Resistance, Junction-to-Ambient * JA R Thermal Resistance, Junction-to-Ambient JA * When mounted on the minimum pad size recommended (PCB Mount) ©2008 Fairchild Semiconductor Corporation Features • -27A, -60V, R • Low gate charge ( typical 33 nC) • Low Crss ( typical 120 pF) • Fast switching • 100% avalanche tested • ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 0.9mH -27A -25V ≤ -27A, di/dt ≤ 300A ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2008 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions -250 -250 A, Referenced to 25° - ...

Page 3

... Drain Current [A] D Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 3000 2500 C oss 2000 C iss 1500 1000 C rss 500 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2008 Fairchild Semiconductor Corporation 175℃ 25℃ ※ Notes : 1. 250μ s Pulse Test 25℃ 10V 0 10 ※ ...

Page 4

... Notes : 175 Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2008 Fairchild Semiconductor Corporation (Continued) 2.5 2.0 1.5 1.0 ※ Notes : 0 -250 μ 0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation 30 25 100 Figure 10. Maximum Drain Current ※ ...

Page 5

... Resistive Switching Test Circuit & Waveforms -10V -10V Unclamped Inductive Switching Test Circuit & Waveforms -10V -10V ©2008 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT -10V -10V DUT DUT DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2008 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Compliment of DUT Compliment of DUT (N-Channel) (N-Channel) • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Package Dimensions ©2008 Fairchild Semiconductor Corporation PAK Dimensions in Millimeters Rev. A3. Oct 2008 ...

Page 8

... Package Dimensions (Continued) ©2008 Fairchild Semiconductor Corporation PAK Dimensions in Millimeters Rev. A3. Oct 2008 ...

Page 9

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...

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