FQB27P06TM Fairchild Semiconductor, FQB27P06TM Datasheet - Page 4

• Manufacturer Part Number: FQB27P06TM
• Description: MOSFET P-CH 60V 27A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQB27P06TM

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 70 mOhm @ 13.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 27A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 25V
• Power - Max: 3.75W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.07 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 12.4 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 27 A
• Power Dissipation: 3750 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 27A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 55mohm
• Rds(on) Test Voltage Vgs: -10V
• Transistor Case Style: D2-PAK
• No. Of Pins: 3
• Svhc: No SVHC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FQB27P06TM

©2008 Fairchild Semiconductor Corporation
Typical Characteristics
10
1.2
1.1
1.0
0.9
0.8
10
10
10
Figure 9. Maximum Safe Operating Area
-100
-1
2
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
T
-V
vs. Temperature
J
, Junction Temperature [
DS
0
Operation in This Area
is Limited by R
, Drain-Source Voltage [V]
1 0
1 0
※ Notes :
1 0
1. T
2. T
3. Single Pulse
- 1
- 2
1 0
0
C
J
= 175
= 25
- 5
D = 0 . 5
0 .0 2
o
0 .0 5
0 .0 1
C
0 .2
o
0 .1
10
50
DS(on)
C
1
DC
Figure 11. Transient Thermal Response Curve
10 ms
100
1 0
(Continued)
o
- 4
C]
1 ms
※ Notes :
1. V
2. I
s in g le p u ls e
t
1
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
D
100 s
GS
= -250 μ A
150
= 0 V
1 0
- 3
200
10
2
1 0
- 2
2.5
2.0
1.5
1.0
0.5
0.0
30
25
20
15
10
5
0
-100
25
※ N o te s :
Figure 8. On-Resistance Variation
1 . Z
2 . D u ty F a c t o r , D = t
3 . T
Figure 10. Maximum Drain Current
1 0
- 1
P
θ J C
J M
-50
DM
50
- T
( t ) = 1 . 2 5 ℃ /W M a x .
C
vs. Case Temperature
= P
T
vs. Temperature
J
T
D M
t
, Junction Temperature [
1
C
75
t
0
, Case Temperature [ ℃ ]
1 0
* Z
2
1
0
/t
θ J C
2
( t )
100
50
1 0
1
125
100
o
C]
※ Notes :
1. V
2. I
150
150
D
GS
= -13.5 A
= -10 V
200
175
Rev. A3. Oct 2008