FDB8896 Fairchild Semiconductor, FDB8896 Datasheet - Page 7

MOSFET N-CH 30V 93A TO-263AB

FDB8896

Manufacturer Part Number
FDB8896
Description
MOSFET N-CH 30V 93A TO-263AB
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDB8896

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5.7 mOhm @ 35A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
93A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
67nC @ 10V
Input Capacitance (ciss) @ Vds
2525pF @ 15V
Power - Max
80W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0057 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
19 A
Power Dissipation
80000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDB8896
FDB8896TR

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©2008 Fairchild Semiconductor Corporation
Thermal Resistance vs. Mounting Pad Area
The maximum rated junction temperature, T
thermal resistance of the heat dissipating path determines
the maximum allowable device power dissipation, P
application.
temperature, T
must be reviewed to ensure that T
Equation 1 mathematically represents the relationship and
serves as the basis for establishing the rating of the part.
In using surface mount devices such as the TO-263
package, the environment in which it is applied will have a
significant influence on the part’s current and maximum
power dissipation ratings. Precise determination of P
complex and influenced by many factors:
1. Mounting pad area onto which the device is attached and
2. The number of copper layers and the thickness of the
3. The use of external heat sinks.
4. The use of thermal vias.
5. Air flow and board orientation.
6. For non steady state applications, the pulse width, the
Fairchild provides thermal information to assist the
designer’s preliminary application evaluation. Figure 21
defines the R
copper (component side) area. This is for a horizontally
positioned FR-4 board with 1oz copper after 1000 seconds
of steady state power with no air flow. This graph provides
the necessary information for calculation of the steady state
junction
applications can be evaluated using the Fairchild device
Spice thermal model or manually utilizing the normalized
maximum transient thermal impedance curve.
Thermal resistances corresponding to other copper areas
can be obtained from Figure 21 or by calculation using
Equation 2 or 3. Equation 2 is used for copper area defined
in inches square and equation 3 is for area in centimeters
square. The area, in square inches or square centimeters is
the top copper area including the gate and source pads.
R
R
P DM
whether there is copper on one side or both sides of the
board.
board.
duty cycle and the transient thermal response of the part,
the board and the environment they are in.
JA
JA
=
=
=
-----------------------------
temperature
T JM T A
26.51
26.51
R
A
JA
JA
(
Therefore
+
+
o
for the device as a function of the top
C), and thermal resistance R
------------------------------------ -
--------------------------------- -
0.262
1.69
19.84
128
or
+
+
Area
Area
the
power
Area in Centimeters Squared
application’s
JM
dissipation.
is never exceeded.
Area in Inches Squared
JM
, and the
JA
(EQ. 1)
(EQ. 2)
(EQ. 3)
DM
ambient
(
o
, in an
Pulse
DM
C/W)
is
Figure 21. Thermal Resistance vs Mounting
80
60
40
20
(0.645)
0.1
AREA, TOP COPPER AREA in
R
Pad Area
R
JA
JA
= 26.51+ 19.84/(0.262+Area) EQ.2
= 26.51+ 128/(1.69+Area) EQ.3
(6.45)
1
2
(cm
2
)
FDB8896 Rev. B2
(64.5)
10

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