FDB8896 Fairchild Semiconductor, FDB8896 Datasheet - Page 4

• Manufacturer Part Number: FDB8896
• Description: MOSFET N-CH 30V 93A TO-263AB
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDB8896

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.7 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 93A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 67nC @ 10V
• Input Capacitance (ciss) @ Vds: 2525pF @ 15V
• Power - Max: 80W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0057 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 19 A
• Power Dissipation: 80000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDB8896; FDB8896TR

©2008 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 9. Drain to Source On Resistance vs Gate
Figure 5. Forward Bias Safe Operating Area
160
120
1000
80
40
100
0.1
0
10
14
12
10
1.5
8
6
4
1
1
2
Figure 7. Transfer Characteristics
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
V
SINGLE PULSE
T
T
DD
I
OPERATION IN THIS
D
J
C
LIMITED BY r
T
= MAX RATED
= 15V
= 1A
= 25
J
Voltage and Drain Current
AREA MAY BE
= 175
o
2.0
C
V
I
V
D
V
GS
T
DS
o
GS
= 35A
J
C
, GATE TO SOURCE VOLTAGE (V)
, DRAIN TO SOURCE VOLTAGE (V)
= 25
4
, GATE TO SOURCE VOLTAGE (V)
DS(ON)
o
C
2.5
6
10
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
3.0
T
C
= 25°C unless otherwise noted
T
J
= -55
8
3.5
o
C
10ms
10 s
100 s
1ms
DC
60
10
4
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
500
100
160
120
Figure 10. Normalized Drain to Source On
Figure 6. Unclamped Inductive Switching
10
80
40
1.6
1.4
1.2
1.0
0.8
0.6
1
0
0.01
Resistance vs Junction Temperature
0
Figure 8. Saturation Characteristics
-80
If R = 0
t
If R
t
AV
AV
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
= (L)(I
= (L/R)ln[(I
0
0.25
-40
V
AS
DS
T
)/(1.3*RATED BV
0.1
J
t
, DRAIN TO SOURCE VOLTAGE (V)
V
, JUNCTION TEMPERATURE (
AV
AS
GS
, TIME IN AVALANCHE (ms)
0
*R)/(1.3*RATED BV
0.5
Capability
STARTING T
= 10V
40
0.75
1
DSS
J
V
DUTY CYCLE = 0.5% MAX
= 150
T
PULSE DURATION = 80 s
80
- V
GS
C
STARTING T
DD
= 25
DSS
= 4V
o
1.0
)
V
C
o
- V
GS
C
120
DD
= 10V, I
10
V
o
GS
V
C)
) +1]
GS
J
1.25
= 5V
= 25
= 3V
160
D
= 35A
o
FDB8896 Rev. B2
C
100
200
1.5