FDB8896 Fairchild Semiconductor, FDB8896 Datasheet - Page 2

• Manufacturer Part Number: FDB8896
• Description: MOSFET N-CH 30V 93A TO-263AB
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDB8896

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.7 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 93A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 67nC @ 10V
• Input Capacitance (ciss) @ Vds: 2525pF @ 15V
• Power - Max: 80W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0057 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 19 A
• Power Dissipation: 80000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDB8896; FDB8896TR

©2008 Fairchild Semiconductor Corporation
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1: Package current limitation is 80A.
2: Starting T
3: Pulse width = 100s.
4
B
I
I
V
r
C
C
C
R
Q
Q
Q
Q
Q
Q
t
t
t
t
t
t
V
t
Q
DSS
GSS
ON
d(ON)
r
d(OFF)
f
OFF
rr
DS(ON)
GS(TH)
VDSS
SD
ISS
OSS
RSS
G
g(TOT)
g(5)
g(TH)
gs
gs2
gd
RR
Symbol
J
= 25°C, L = 36 H, I
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Drain to Source On Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
AS
= 64A, V
Parameter
DD
(V
= 27V, V
GS
= 10V)
T
C
GS
= 25°C unless otherwise noted
= 10V.
V
V
V
I
I
V
V
V
I
I
I
T
V
f = 1MHz
V
V
V
V
I
I
I
D
D
D
D
SD
SD
SD
SD
J
DS
GS
GS
GS
DS
GS
GS
GS
GS
DD
GS
= 250 A, V
= 35A, V
= 35A, V
= 35A, V
= 175
= 35A
= 20A
= 35A, dI
= 35A, dI
= 24V
= 0V
= 20V
= V
= 15V, V
= 0.5V, f = 1MHz
= 0V to 10V
= 0V to 5V
= 0V to 1V
= 15V, I
= 4.5V, R
Test Conditions
DS
o
C
, I
GS
GS
GS
D
D
SD
SD
GS
GS
= 35A
GS
= 10V
= 4.5V
= 10V,
= 250 A
/dt = 100A/ s
/dt = 100A/ s
= 0V,
= 0V
= 6.2
T
V
I
I
D
g
C
DD
= 1.0mA
= 35A
= 150
= 15V
o
C
Min
1.2
30
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.0049 0.0057
0.0059 0.0068
0.0078 0.0094
2525
490
300
102
Typ
2.3
2.3
5.7
9.5
48
25
58
44
8
9
-
-
-
-
-
-
-
-
-
-
-
1.25
Max
250
167
153
2.5
3.0
1.0
100
67
36
27
12
1
-
-
-
-
-
-
-
-
-
-
-
-
FDB8896 Rev. B2
Units
nC
nC
nC
nC
nC
nC
nC
nA
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
V
V
V
V
A