FDB8896 Fairchild Semiconductor, FDB8896 Datasheet - Page 5

• Manufacturer Part Number: FDB8896
• Description: MOSFET N-CH 30V 93A TO-263AB
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDB8896

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.7 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 93A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 67nC @ 10V
• Input Capacitance (ciss) @ Vds: 2525pF @ 15V
• Power - Max: 80W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0057 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 19 A
• Power Dissipation: 80000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDB8896; FDB8896TR

©2008 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 11. Normalized Gate Threshold Voltage vs
Figure 13. Capacitance vs Drain to Source
5000
1000
100
1.2
1.0
0.8
0.6
0.4
0.1
-80
V
C
GS
RSS
= 0V, f = 1MHz
-40
Junction Temperature
V
C
DS
T
GD
J
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
0
Voltage
1
40
80
V
T
GS
C
= V
= 25°C unless otherwise noted
C
C
120
ISS
OSS
DS
o
, I
C)
D
C
10
C
GS
= 250 A
160
DS
+ C
+ C
GD
GD
200
30
Figure 14. Gate Charge Waveforms for Constant
Breakdown Voltage vs Junction Temperature
10
8
6
4
2
0
1.2
1.1
1.0
0.9
Figure 12. Normalized Drain to Source
0
-80
V
DD
I
D
= 250 A
= 15V
-40
10
T
J
, JUNCTION TEMPERATURE (
Gate Current
0
Q
g
, GATE CHARGE (nC)
20
40
WAVEFORMS IN
DESCENDING ORDER:
80
30
I
I
D
D
= 35A
= 16A
120
o
C)
40
160
FDB8896 Rev. B2
200
50