FDN352AP Fairchild Semiconductor, FDN352AP Datasheet - Page 4

• Manufacturer Part Number: FDN352AP
• Description: MOSFET P-CH 30V 1.3A SSOT-3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDN352AP

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 180 mOhm @ 1.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.3A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.9nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 150pF @ 15V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.18 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 2 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 1.3 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDN352AP

FDN352AP Rev. C1
Typical Characteristics
0.01
10
100
0.1
8
6
4
2
0
10
1
Figure 9. Maximum Safe Operating Area.
0
0.1
Figure 7. Gate Charge Characteristics.
I
D
= -0.9A
SINGLE PULSE
0.001
R
0.01
θ
V
JA
0.1
R
T
GS
DS(ON)
A
0.0001
1
= 270
= 25
0.5
= -10V
LIMIT
o
o
C
C/W
-V
D = 0.5
0.2
DS
0.1
0.05
0.02
, DRAIN-SOURCE VOLTAGE (V)
0.01
Q
1
1
g
, GATE CHARGE (nC)
SINGLE PULSE
V
0.001
DS
= -10V
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
DC
1.5
10s
Figure 11. Transient Thermal Response Curve.
1s
-15V
100ms
10ms
2
10
1ms
0.01
-20V
100µs
2.5
100
3
0.1
t
1
4
, TIME (sec)
200
150
100
50
50
40
30
20
10
0.0001
0
0
0
Figure 8. Capacitance Characteristics.
C
1
rss
Figure 10. Single Pulse Maximum
0.001
5
-V
DS
Power Dissipation.
0.01
C
, DRAIN TO SOURCE VOLTAGE (V)
oss
10
10
t
0.1
1
, TIME (sec)
15
P(pk)
Duty Cycle, D = t
T
1
R
R
J
θ JA
– T
C
θ JA
100
iss
(t) = r(t) * R
A
t
= 270°C/W
1
20
= P * R
t
2
10
SINGLE PULSE
R
θ
JA
T
A
θ JA
= 270°C/W
= 25°C
θ JA
1
www.fairchildsemi.com
(t)
/ t
100
25
2
f = 1 MHz
V
GS
1000
= 0 V
1000
30