FDN352AP Fairchild Semiconductor, FDN352AP Datasheet - Page 2
![MOSFET P-CH 30V 1.3A SSOT-3](/photos/5/45/54562/261-supersot-3_sml.jpg)
FDN352AP
Manufacturer Part Number
FDN352AP
Description
MOSFET P-CH 30V 1.3A SSOT-3
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDN352AP.pdf
(5 pages)
Specifications of FDN352AP
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
180 mOhm @ 1.3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
1.3A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
1.9nC @ 4.5V
Input Capacitance (ciss) @ Vds
150pF @ 15V
Power - Max
460mW
Mounting Type
Surface Mount
Package / Case
3-SSOT, SuperSOT-3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.18 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
2 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
1.3 A
Power Dissipation
500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDN352AP
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDN352AP
Manufacturer:
FSC
Quantity:
69 000
Company:
Part Number:
FDN352AP
Manufacturer:
Intersil
Quantity:
130
Part Number:
FDN352AP
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDN352AP-NL
Manufacturer:
ON/安森美
Quantity:
20 000
FDN352AP Rev. C1
Electrical Characteristics
Notes:
1. R
2. Pulse Test: Pulse Width < 300 µ s, Duty Cycle < 2.0%
Off Characteristics
BV
∆ BV
I
I
On Characteristics (Note 2)
V
∆ V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics (Note 2)
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
t
Q
Symbol
DSS
GSS
d(on)
r
d(off)
f
S
rr
FS
GS(th)
SD
∆ T
∆ T
DS(on)
iss
oss
rss
surface of the drain pins R
(a) R
(b) R
g
gs
gd
rr
GS(th)
DSS
θ JA
DSS
J
J
θ JA
θ JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
= 250°C/W when mounted on a 0.02 in
= 270°C/W when mounted on a 0.001 in
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
θ JC
Parameter
is guaranteed by design while R
T
A
2
= 25°C unless otherwise noted
2
pad of 2oz. copper.
pad of 2oz. copper.
θ JA
V
I
V
V
V
I
V
V
V
V
V
V
V
V
V
V
I
dI
is determined by the user’s board design.
D
D
F
GS
DS
GS
DS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
F
= –3.9 A,
= –250 µ A, Referenced to 25 ° C
= –250 µ A, Referenced to 25 ° C
/dt = 100 A/µs
= 0 V, I
= –24 V, V
= ± 25 V, V
= V
= –10 V, I
= –4.5 V, I
= –4.5 V, I
= –5 V, I
= –15 V, V
= –10 V, I
= –10 V, R
= –10V, I
= –4.5 V
= 0 V, I
2
GS
Test Conditions
, I
D
S
D
D
= –250 µ A
= –0.42 A
D
D
D
= –250 µ A
GS
DS
D
D
= –0.9 A
GS
GEN
= –0.9 A,
= –1.3 A
= –1 A,
= –1.1 A
= –1.1 A, T
= 0 V
= 0 V
= 0 V, f = 1.0 MHz
= 6 Ω
J
(Note 2)
= 125 ° C
Min
–0.8
–30
Typ
–2.0
–0.8
–17
150
250
330
150
2.0
1.4
0.5
0.5
40
20
15
10
17
4
4
1
7
–0.42
Max Units
± 100
–2.5
–1.2
180
300
400
1.9
www.fairchildsemi.com
–1
28
18
8
2
mV/ ° C
mV/ ° C
m Ω
nC
nC
nC
nC
µ A
nA
pF
pF
pF
ns
ns
ns
ns
ns
A
V
V
V
S