FDN352AP Fairchild Semiconductor, FDN352AP Datasheet - Page 3

• Manufacturer Part Number: FDN352AP
• Description: MOSFET P-CH 30V 1.3A SSOT-3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDN352AP

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 180 mOhm @ 1.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.3A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.9nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 150pF @ 15V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.18 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 2 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 1.3 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDN352AP

FDN352AP Rev. C1
Typical Characteristics
10
10
8
6
4
2
0
8
6
4
2
0
0
1.4
1.2
0.8
0.6
1
Figure 3. On-Resistance Variation with
1
V
Figure 1. On-Region Characteristics.
-50
GS
Figure 5. Transfer Characteristics.
V
= -10V
DS
V
I
D
GS
= -5V
2
= -0.9A
-25
= -10V
1
-V
-V
DS
GS
, DRAIN TO SOURCE VOLTAGE (V)
T
3
, GATE TO SOURCE VOLTAGE (V)
0
J
, JUNCTION TEMPERATURE (
Temperature.
-6.0V
2
25
T
A
4
= -55
-4.5V
50
o
C
5
3
-4.0V
25
75
o
C
6
o
C)
100
-3.5V
125
4
o
C
125
7
-3.0V
150
5
8
3
Figure 6. Body Diode Forward Voltage Variation
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0001
0.001
0.01
100
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
2
0.1
10
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
1
0.0
0
T
A
V
Drain Current and Gate Voltage.
= 25
V
GS
GS
= -4.0V
= 0V
o
C
-4.5V
0.2
Gate-to-Source Voltage.
-V
SD
-V
2
4
, BODY DIODE FORWARD VOLTAGE (V)
GS
-5.0V
T
A
, GATE TO SOURCE VOLTAGE (V)
= 125
0.4
T
A
-I
= 125
D
, DRAIN CURRENT (A)
o
C
-6.0V
4
o
0.6
C
25
6
o
C
-7.0V
0.8
6
-55
o
C
-8.0V
1.0
8
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8
I
D
1.2
= -0.45A
-10V
1.4
10
10