FDN352AP Fairchild Semiconductor, FDN352AP Datasheet

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... R Thermal Resistance, Junction-to-Case θ JC Package Marking and Ordering Information Device Marking 52AP FDN352AP ©2005 Fairchild Semiconductor Corporation FDN352AP Rev. C1 ® MOSFET General Description = –10V This P-Channel Logic Level MOSFET is produced using Fair –4.5V child Semiconductor advanced Power Trench process that has ...

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... R is guaranteed by design while R θ 250°C/W when mounted on a 0.02 in θ 270°C/W when mounted on a 0.001 in θ Pulse Test: Pulse Width < 300 µ s, Duty Cycle < 2.0% FDN352AP Rev 25°C unless otherwise noted A Test Conditions = –250 µ – ...

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... JUNCTION TEMPERATURE ( J Figure 3. On-Resistance Variation with Temperature - - GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics. FDN352AP Rev 2.2 2.0 1.8 1.6 1.4 -4.0V 1.2 -3.5V 1.0 -3.0V 0 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.7 0.6 0.5 0.4 0.3 ...

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... SINGLE PULSE 0.001 0.0001 0.001 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDN352AP Rev. C1 200 150 -20V 100 -15V 50 C rss ...

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... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FDN352AP Rev. C1 PowerSaver™ ISOPLANAR™ PowerTrench  LittleFET™ QFET  MICROCOUPLER™ QS™ MicroFET™ QT Optoelectronics™ ...