FQN1N60CTA Fairchild Semiconductor, FQN1N60CTA Datasheet - Page 4

• Manufacturer Part Number: FQN1N60CTA
• Description: MOSFET N-CH 600V 300MA TO-92
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQN1N60CTA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11.5 Ohm @ 150mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 6.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 1W
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 11.5 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 0.75 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 0.3 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FQN1N60CTA; FQN1N60CTATB

FQN1N60C Rev. A
Typical Performance Characteristics
Figure 9. Maximum Safe Operating Area
Figure 7. Breakdown Voltage Variation
1.2
1.1
1.0
0.9
0.8
10
10
-100
-1
0
10
0
-50
vs. Temperature
V
T
J
DS
Operation in This Area
is Limited by R
, Junction Temperature [
10
0
, Drain-Source Voltage [V]
1
DC
1 0
1 0
1 0
1 0
-1
1 0
2
1
0
DS(on)
-5
50
D = 0 .5
※
0 .0 5
0 .0 2
0 .0 1
0 .2
0 .1
1. T
2. T
3. Single Pulse
Notes :
C
J
100 ms
= 150
Figure 11. Transient Thermal Response Curve
= 25
1 0
100
o
C
10
o
C
-4
10 ms
o
2
C]
※
1. V
2. I
1 ms
Notes :
t
D
GS
1
= 250 µA
1 0
, S q u a r e W a v e P u ls e D u r a tio n [s e c ]
150
= 0 V
100 s
-3
200
10
s in g le p u ls e
1 0
3
-2
(Continued)
4
1 0
-1
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
1 0
0
0.3
0.2
0.1
0.0
※
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
-100
1 . Z
2 . D u ty F a c to r, D = t
3 . T
N o te s :
θ J L
J M
1 0
(t) = 5 0
- T
1
vs. Case Temperature
L
= P
-50
50
℃
D M
vs. Temperature
/W M a x .
* Z
1 0
T
1
T
θ J L
J
/t
, Junction Temperature [
2
C
2
, Case Temperature [ ]
( t)
0
75
1 0
50
3
100
100
℃
o
C]
※
125
1. V
2. I
150
Notes :
D
www.fairchildsemi.com
GS
= 0.15 A
= 10 V
200
150