FQN1N60CTA Fairchild Semiconductor, FQN1N60CTA Datasheet - Page 3

• Manufacturer Part Number: FQN1N60CTA
• Description: MOSFET N-CH 600V 300MA TO-92
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQN1N60CTA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11.5 Ohm @ 150mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 6.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 1W
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 11.5 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 0.75 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 0.3 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FQN1N60CTA; FQN1N60CTATB

FQN1N60C Rev. A
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
10
10
10
250
200
150
100
30
25
20
15
10
50
Drain Current and Gate Voltage
-1
-2
0
5
0
0
10
0.0
10
-1
-1
Top :
Bottom : 4.5 V
10.0 V
15.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
V
GS
0.5
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
10
I
10
D
, Drain Current [A]
0
1.0
0
C
V
C
C
oss
GS
iss
rss
= 10V
1.5
C
C
C
iss
oss
rss
V
10
= C
10
= C
= C
GS
※
※
1
1
gs
ds
gd
1. 250µ s Pulse Test
2. T
= 20V
Notes :
Note : T
+ C
+ C
2.0
C
gd
= 25 ℃
gd
(C
※
J
1. V
2. f = 1 MHz
ds
Notes ;
= 25 ℃
= shorted)
GS
= 0 V
2.5
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
10
10
10
10
-1
-1
0.2
0
12
10
0
8
6
4
2
0
2
0
Variation vs. Source Current
25
o
C
0.4
150
V
1
SD
and Temperatue
o
C
, Source-Drain voltage [V]
4
V
V
150
DS
V
GS
Q
DS
0.6
= 120V
, Gate-Source Voltage [V]
G
℃
= 300V
2
, Total Gate Charge [nC]
V
DS
25
= 480V
℃
-55
0.8
o
C
6
3
※
Note : I
※
1.0
D
※
= 1.1A
4
Notes :
1. V
2. 250µ s Pulse Test
1. V
2. 250µ s Pulse Test
Notes :
DS
GS
8
= 40V
= 0V
1.2
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5
1.4
10
6