FQN1N60CTA Fairchild Semiconductor, FQN1N60CTA Datasheet
FQN1N60CTA
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FQN1N60CTATB
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FQN1N60CTA Summary of contents
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... Thermal Characteristics Symbol R Thermal Resistance, Junction-to-Lead JL R Thermal Resistance, Junction-to-Ambient JA ©2005 Fairchild Semiconductor Corporation FQN1N60C Rev. A Description = 10 V These N-Channel enhancement mode power field effect GS transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...
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Package Marking and Ordering Information Device Marking Device 1N60C FQN1N60C Electrical Characteristics Symbol Parameter Off Characteristics BV Drain-Source Breakdown Voltage DSS BV / Breakdown Voltage Temperature DSS T Coefficient J I Zero Gate Voltage Drain Current DSS I Gate-Body Leakage ...
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Typical Performance Characteristics Figure 1. On-Region Characteristics V GS Top : 15.0 V 10.0 V 8 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4 ...
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Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Figure 9. Maximum Safe Operating Area Operation in This Area is Limited by R DS(on) ...
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3mA 3mA 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V FQN1N60C ...
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Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FQN1N60C Rev. A Peak Diode Recovery ...
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Mechanical Dimensions 0.46 1.27TYP [1.27 0.20 FQN1N60C Rev. A TO-92 +0.25 4.58 –0.15 0.10 1.27TYP ] [1.27 ] 0.20 3.60 0.20 (R2.29) 7 +0.10 0.38 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. FAST ® ACEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...