FDS6681Z Fairchild Semiconductor, FDS6681Z Datasheet - Page 5

• Manufacturer Part Number: FDS6681Z
• Description: MOSFET P-CH 30V 20A SO-8
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6681Z

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 260nC @ 10V
• Input Capacitance (ciss) @ Vds: 7540pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.0046 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 79 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 20 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS6681Z; FDS6681ZTR

Typical Characteristics
1000
0.01
10
100
0.1
8
6
4
2
0
10
Figure 9. Maximum Safe Operating Area.
1
0.01
0
Figure 7. Gate Charge Characteristics.
I
D
R
SINGLE PULSE
R
= -20A
0.001
DS(ON)
θ JA
0.01
V
T
0.1
GS
A
0.0001
= 125
1
= 25
= -10V
LIMIT
40
o
o
C
C/W
-V
0.1
D = 0.5
DS
, DRAIN-SOURCE VOLTAGE (V)
0.2
V
0.1
Q
0.05
DS
0.02
g
, GATE CHARGE (nC)
= -10V
0.01
80
0.001
DC
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
SINGLE PULSE
-15V
10s
1
Figure 11. Transient Thermal Response Curve.
1s
120
100ms
10ms
-20V
0.01
1ms
10
100us
160
0.1
200
100
t
1
, TIME (sec)
10000
8000
6000
4000
2000
50
40
30
20
10
0
0.001
1
0
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
C
rss
0.01
5
-V
Power Dissipation.
10
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
oss
0.1
10
t
1
, TIME (sec)
P(pk
Duty Cycle, D = t
T
R
R
J
15
1
θ JA
100
- T
θ JA
(t) = r(t) * R
t
1
A
= 125 °C/W
t
2
= P * R
10
20
θ JA
1
JA
C
(t)
/ t
SINGLE PULSE
R
iss
2
θ JA
1000
T
FDS6681Z Rev B (W)
A
= 125°C/W
100
= 25°C
25
V
f = 1MHz
GS
= 0 V
1000
30