FDS6681Z Fairchild Semiconductor, FDS6681Z Datasheet - Page 2

• Manufacturer Part Number: FDS6681Z
• Description: MOSFET P-CH 30V 20A SO-8
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6681Z

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 260nC @ 10V
• Input Capacitance (ciss) @ Vds: 7540pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.0046 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 79 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 20 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS6681Z; FDS6681ZTR

Symbol
BV
∆BV
I
I
V
∆V
R
g
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
C
C
C
t
t
t
t
Q
Q
Q
Q
DSS
GSS
d(on)
r
d(off)
f
FS
GS(th)
DS(on)
∆T
∆T
iss
oss
rss
g(TOT)
g(TOT)
gs
gd
GS(th)
DSS
DSS
J
J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge at V
Total Gate Charge at V
Gate–Source Charge
Gate–Drain Charge
Parameter
(Note 2)
(Note 2)
GS
GS
= –10V
= –5V
T
A
V
I
V
V
V
I
V
V
V
V
V
f = 1.0 MHz
V
V
V
= 25°C unless otherwise noted
D
D
GS
DS
GS
DS
GS
GS
GS
DS
DS
DD
GS
DS
= –250 µA, Referenced to 25°C
= –250 µA, Referenced to 25°C
= –10 V, I
= 0 V,
= –24 V, V
= ±25 V, V
= V
= –10 V, I
= –4.5 V, I
= –5 V,
= –15 V, V
= –15 V, I
= –10 V, R
= –15 V, I
Test Conditions
GS
, I
D
= –250 µA
D
I
I
D
D
D
D
GEN
D
= –20 A,T
D
GS
DS
= –20 A
GS
= –250 µA
= –20 A
= –17 A
= –20 A
= –1 A,
= 0 V
= 0 V
= 6 Ω
= 0 V,
J
=125°C
Min
–30
–1
7540
1400
1120
Typ
–1.8
–26
660
380
185
105
3.8
5.2
5.0
79
20
26
47
6
9
Max Units
1060
±10
610
260
150
4.6
6.5
6.3
–1
–3
35
18
FDS6681Z Rev B (W)
mV/°C
mV/°C
mΩ
pF
pF
pF
nC
nC
nC
nC
µA
µA
ns
ns
ns
ns
V
V
S