FDS6681Z Fairchild Semiconductor, FDS6681Z Datasheet - Page 3

• Manufacturer Part Number: FDS6681Z
• Description: MOSFET P-CH 30V 20A SO-8
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6681Z

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 260nC @ 10V
• Input Capacitance (ciss) @ Vds: 7540pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.0046 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 79 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 20 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS6681Z; FDS6681ZTR

I
V
Drain–Source Diode Characteristics and Maximum Ratings
t
Electrical Characteristics
Symbol
Q
Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
S
RR
SD
RR
drain pins. R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
θJC
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Reverse Recovery Time
Reverse Recovery Charge
is guaranteed by design while R
a) 50°C/W (10 sec)
62.5°C/W steady state
when mounted on a
1in
copper
Parameter
2
pad of 2 oz
θCA
is determined by the user's board design.
T
A
V
I
dI
= 25°C unless otherwise noted
F
GS
F
= –20 A,
/dt = 100 A/µs
= 0 V,
b) 105°C/W when
Test Conditions
mounted on a .04 in
pad of 2 oz copper
I
S
= –2.1 A
2
(Note 2)
(Note 2)
Min
c) 125°C/W when mounted
Typ
on a minimum pad.
–0.7
125
94
Max Units
–2.1
–1.2
FDS6681Z Rev B (W)
nC
ns
A
V