FDS6681Z Fairchild Semiconductor, FDS6681Z Datasheet - Page 4

• Manufacturer Part Number: FDS6681Z
• Description: MOSFET P-CH 30V 20A SO-8
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6681Z

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 260nC @ 10V
• Input Capacitance (ciss) @ Vds: 7540pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.0046 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 79 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 20 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS6681Z; FDS6681ZTR

Typical Characteristics
105
90
75
60
45
30
15
105
0
90
75
60
45
30
15
1.6
1.4
1.2
0.8
0.6
0
Figure 3. On-Resistance Variation with
1
1
Figure 1. On-Region Characteristics.
-50
0
V
Figure 5. Transfer Characteristics.
DS
V
V
I
GS
D
GS
= -5V
= -20A
-30
= -10V
-6.0V
= -10V
1.25
T
-10
-V
A
GS
= 125
0.5
-V
T
, GATE TO SOURCE VOLTAGE (V)
J
DS
, JUNCTION TEMPERATURE (
Temperature.
10
, DRAIN-SOURCE VOLTAGE (V)
o
C
-4.5V
1.5
30
-4.0V
25
50
1
o
C
1.75
70
-3.5V
-55
o
C
90
1.5
o
C)
2
110
-3.0V
130
2.25
150
2
Figure 6. Body Diode Forward Voltage Variation
0.012
0.008
0.006
0.004
0.002
0.001
0.01
1000
0.01
100
0.1
2.4
2.2
1.8
1.6
1.4
1.2
0.8
10
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
2
1
1
2
0
0
V
V
Drain Current and Gate Voltage.
GS
GS
T
= -3.5V
A
= 0V
= 25
15
Gate-to-Source Voltage.
0.2
-4.0V
-V
o
C
T
SD
-V
A
, BODY DIODE FORWARD VOLTAGE (V)
= 125
GS
4
, GATE TO SOURCE VOLTAGE (V)
30
-I
o
0.4
C
D
-4.5V
, DRAIN CURRENT (A)
45
T
-5.0V
25
A
0.6
6
= 125
o
C
60
o
C
-6.0V
0.8
-55
75
o
C
8
-8.0V
FDS6681Z Rev B (W)
I
D
1
90
= -10A
-10V
105
10
1.2