RFD14N05L Fairchild Semiconductor, RFD14N05L Datasheet - Page 5

• Manufacturer Part Number: RFD14N05L
• Description: MOSFET N-CH 50V 14A I-PAK
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of RFD14N05L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 14A, 5V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 670pF @ 25V
• Power - Max: 48W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 14 A
• Power Dissipation: 48 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.1Ohm
• Drain-source On-volt: 50V
• Gate-source Voltage (max): ±10V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: IPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
Test Circuits and Waveforms
©2010 Fairchild Semiconductor Corporation
FIGURE 14. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs
VARY t
REQUIRED PEAK I
0V
800
600
400
200
2.0
1.5
1.0
0.5
FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT
0
0
0
P
-80
TO OBTAIN
V
GS
V
t
GS
P
JUNCTION TEMPERATURE
= V
-40
DS
V
AS
5
DS
, I
T
J
D
, JUNCTION TEMPERATURE (
, DRAIN TO SOURCE VOLTAGE (V)
= 250µA
0
10
R
G
40
80
15
V
C
C
C
V
I
Unless Otherwise Specified (Continued)
GS
AS
ISS
RSS
OSS
DS
120
= 0V, f = 1MHz
= C
DUT
o
= C
≈ C
0.01Ω
C)
L
20
GS
GD
DS
160
C
C
C
+ C
ISS
OSS
RSS
+ C
GD
-
+
GD
V
DD
200
25
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260,
FIGURE 13. NORMALIZED DRAIN TO SOURCE BREAKDOWN
0
FIGURE 15. TRANSCONDUCTANCE vs DRAIN CURRENT
50
40
30
20
10
0
2.0
1.5
1.0
0.5
FIGURE 17. UNCLAMPED ENERGY WAVEFORMS
0
-80
I
D
V
DD
= 250µA
20
VOLTAGE vs JUNCTION TEMPERATURE
-40
I G REF
------------------------ -
I
= BV
G ACT
(
(
T
DSS
J
I
, JUNCTION TEMPERATURE (
AS
)
)
0
R
I
V
G(REF)
0.75 BV
0.50 BV
0.25 BV
GS
L
t, TIME (µs)
t
P
= 3.57Ω
= 5V
40
= 0.4mA
DSS
DSS
DSS
BV
t
AV
RFD14N05L, RFD14N05LSM Rev. B2
DSS
80
V
DD
80
= BV
I G REF
------------------------ -
I
G ACT
120
(
(
DSS
V
o
DS
C)
)
)
160
V
DD
5
4
3
2
1
0
200