RFD14N05L Fairchild Semiconductor, RFD14N05L Datasheet - Page 5
![MOSFET N-CH 50V 14A I-PAK](/photos/5/47/54737/rfd14n05l_sml.jpg)
RFD14N05L
Manufacturer Part Number
RFD14N05L
Description
MOSFET N-CH 50V 14A I-PAK
Manufacturer
Fairchild Semiconductor
Type
Power MOSFETr
Datasheet
1.RFD14N05L.pdf
(8 pages)
Specifications of RFD14N05L
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
100 mOhm @ 14A, 5V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
40nC @ 10V
Input Capacitance (ciss) @ Vds
670pF @ 25V
Power - Max
48W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.1 Ohms
Drain-source Breakdown Voltage
50 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
14 A
Power Dissipation
48 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.1Ohm
Drain-source On-volt
50V
Gate-source Voltage (max)
±10V
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
IPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Company
Part Number
Manufacturer
Quantity
Price
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Typical Performance Curves
Test Circuits and Waveforms
©2010 Fairchild Semiconductor Corporation
FIGURE 14. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs
VARY t
REQUIRED PEAK I
0V
800
600
400
200
2.0
1.5
1.0
0.5
FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT
0
0
0
P
-80
TO OBTAIN
V
GS
V
t
GS
P
JUNCTION TEMPERATURE
= V
-40
DS
V
AS
5
DS
, I
T
J
D
, JUNCTION TEMPERATURE (
, DRAIN TO SOURCE VOLTAGE (V)
= 250µA
0
10
R
G
40
80
15
V
C
C
C
V
I
Unless Otherwise Specified (Continued)
GS
AS
ISS
RSS
OSS
DS
120
= 0V, f = 1MHz
= C
DUT
o
= C
≈ C
0.01Ω
C)
L
20
GS
GD
DS
160
C
C
C
+ C
ISS
OSS
RSS
+ C
GD
-
+
GD
V
DD
200
25
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260,
FIGURE 13. NORMALIZED DRAIN TO SOURCE BREAKDOWN
0
FIGURE 15. TRANSCONDUCTANCE vs DRAIN CURRENT
50
40
30
20
10
0
2.0
1.5
1.0
0.5
FIGURE 17. UNCLAMPED ENERGY WAVEFORMS
0
-80
I
D
V
DD
= 250µA
20
VOLTAGE vs JUNCTION TEMPERATURE
-40
I G REF
------------------------ -
I
= BV
G ACT
(
(
T
DSS
J
I
, JUNCTION TEMPERATURE (
AS
)
)
0
R
I
V
G(REF)
0.75 BV
0.50 BV
0.25 BV
GS
L
t, TIME (µs)
t
P
= 3.57Ω
= 5V
40
= 0.4mA
DSS
DSS
DSS
BV
t
AV
RFD14N05L, RFD14N05LSM Rev. B2
DSS
80
V
DD
80
= BV
I G REF
------------------------ -
I
G ACT
120
(
(
DSS
V
o
DS
C)
)
)
160
V
DD
5
4
3
2
1
0
200