RFD14N05L Fairchild Semiconductor, RFD14N05L Datasheet

MOSFET N-CH 50V 14A I-PAK

RFD14N05L

Manufacturer Part Number
RFD14N05L
Description
MOSFET N-CH 50V 14A I-PAK
Manufacturer
Fairchild Semiconductor
Type
Power MOSFETr
Datasheet

Specifications of RFD14N05L

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
100 mOhm @ 14A, 5V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
40nC @ 10V
Input Capacitance (ciss) @ Vds
670pF @ 25V
Power - Max
48W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.1 Ohms
Drain-source Breakdown Voltage
50 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
14 A
Power Dissipation
48 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.1Ohm
Drain-source On-volt
50V
Gate-source Voltage (max)
±10V
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
IPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2010 Fairchild Semiconductor Corporation
14A, 50V, 0.100 Ohm, Logic Level,
N-Channel Power MOSFETs
These are N-channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits, gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. This performance is accomplished
through a special gate oxide design which provides full rated
conductance at gate bias in the 3V-5V range, thereby
facilitating true on-off power control directly from logic level
(5V) integrated circuits.
Formerly developmental type TA09870.
Ordering Information
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-252AA variant in the tape and reel, i.e., RFD14N05LSM9A.
Packaging
RFD14N05L
RFD14N05LSM
PART NUMBER
DRAIN (FLANGE)
TO-251AA
TO-252AA
JEDEC TO-251AA
PACKAGE
Data Sheet
SOURCE
14N05L
14N05L
DRAIN
GATE
BRAND
Features
• 14A, 50V
• r
• Temperature Compensating PSPICE
• Can be Driven Directly from CMOS, NMOS, and
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175
• Related Literature
Symbol
TTL Circuits
- TB334 “Guidelines for Soldering Surface Mount
DS(ON)
Components to PC Boards”
o
RFD14N05L, RFD14N
C Operating Temperature
= 0.100Ω
SOURCE
GATE
JEDEC TO-252AA
G
DRAIN (FLANGE)
D
S
RFD14N05L, RFD14N05LSM Rev. B2
May 2010
®
Model
05LSM

Related parts for RFD14N05L

RFD14N05L Summary of contents

Page 1

... PART NUMBER PACKAGE RFD14N05L TO-251AA RFD14N05LSM TO-252AA NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in the tape and reel, i.e., RFD14N05LSM9A. Packaging JEDEC TO-251AA DRAIN (FLANGE) ©2010 Fairchild Semiconductor Corporation RFD14N05L, RFD14N Features • ...

Page 2

... Refer to Peak Current Curve Refer to UIS Curve 0.32 -55 to 175 300 L 260 MIN TYP 150 40V 14A 2.86Ω Figures 20 670 - 185 - MIN TYP - - - - RFD14N05L, RFD14N05LSM Rev. B2 UNITS MAX UNITS - µA 1 µA 50 ±100 nA Ω 0.100 100 1 3.125 C/W o 100 C/W MAX UNITS 1.5 V 125 ns ...

Page 3

... 100 - 100 125 CASE TEMPERATURE ( C) C TEMPERATURE NOTES: DUTY FACTOR PEAK θ θ FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 10V PULSE WIDTH (s) FIGURE 5. PEAK CURRENT CAPABILITY RFD14N05L, RFD14N05LSM Rev. B2 150 175 + ...

Page 4

... GATE TO SOURCE VOLTAGE (V) GS VOLTAGE AND DRAIN CURRENT 2.5 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 10V 14A GS D 2.0 1.5 1.0 0.5 0 -80 - JUNCTION TEMPERATURE ( J RESISTANCE vs JUNCTION TEMPERATURE RFD14N05L, RFD14N05LSM Rev 2.5V GS 7.5 6 28A D 4.5 5.0 120 160 200 o C) ...

Page 5

... I = 250µA D 1.5 1.0 0.5 0 -80 - JUNCTION TEMPERATURE ( J VOLTAGE vs JUNCTION TEMPERATURE DSS 0.75 BV DSS 0.50 BV DSS 0.25 BV DSS 3.57Ω 0.4mA G(REF REF ( ) t, TIME (µs) 20 ------------------------ - ACT BV DSS FIGURE 17. UNCLAMPED ENERGY WAVEFORMS RFD14N05L, RFD14N05LSM Rev. B2 120 160 200 DSS REF ( ) ------------------------ - ACT ...

Page 6

... FIGURE 18. SWITCHING TIME TEST CIRCUIT G(REF) FIGURE 20. GATE CHARGE TEST CIRCUIT ©2010 Fairchild Semiconductor Corporation (Continued DUT DUT G(REF d(ON 90% 10% 50% PULSE WIDTH FIGURE 19. RESISTIVE SWITCHING WAVEFORMS Q g(TOT g( g(TH) FIGURE 21. GATE CHARGE WAVEFORMS RFD14N05L, RFD14N05LSM Rev OFF d(OFF 90% 10% 90% 50 10V GS ...

Page 7

... PSPICE Electrical Model .SUBCKT RFD14N05L rev 9/15/ 1.464e 1.64e-9 CIN 6 8 6.17e-10 DBODY 7 5 DBDMOD DBREAK 5 11 DBKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 65.35 EDS EGS ESG EVTO LDRAIN 2 5 1e-9 LGATE 1 9 5.68e-9 LSOURCE 3 7 5.35e-9 MOS1 MOSMOD M = 0.99 MOS2 MOSMOD M = 0.01 RBREAK 17 18 RBKMOD 1 RDRAIN 50 16 RDSMOD 33 ...

Page 8

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ ...

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